Rev. Phys. Appl. (Paris) 22, 631-636 (1987)
DOI: 10.1051/rphysap:01987002207063100
Recombination effects and impurity segregation at grain boundaries in polycrystalline silicon
S. Pizzini1, A. Sandrinelli1, M. Beghi1, D. Narducci1 et P.L. Fabbri21 Dept. of Physical Chemistry and Electrochemistry, University of Milan, via Golgi, 19, 20133 Milano, Italy
2 Dept. of Physics, University of Modena, via Campi, 2, Italy
Abstract
A quantitative account of the recombination properties of grain boundaries in undoped and impurity doped polycrystalline silicon is given, by analysing the results of EBIC measurements. These latter were carried out after having developed a new sampling methodology, which allows the intercomparison of EBIC results on a relative scale. The problem of synergistic carriers collection effects due to impurities and extended defects is also considered.
Résumé
Les propriétés de recombinaison des joints de grains ont été étudiées de façon quantitative dans du silicium polycristallin dopé et non dopé. Une nouvelle méthodologie appliquée à l'analyse des signaux EBIC permet de comparer entre eux les résultats obtenus sur différents échantillons. Le problème des effets des impuretés et des défauts étendus sur la collecte des porteurs est alors considéré.
6170N - Grain and twin boundaries.
6170R - Crystal impurities: general.
6180F - Electron and positron effects.
6475 - Solubility, segregation, and mixing.
7220J - Charge carriers: generation, recombination, lifetime, and trapping semiconductors/insulators.
Key words
EBIC -- electron hole recombination -- elemental semiconductors -- impurities -- segregation -- silicon -- semiconductor -- impurity doped system -- impurity segregation -- grain boundaries -- polycrystalline -- recombination properties -- undoped -- EBIC measurements -- sampling methodology -- synergistic carriers collection effects -- extended defects -- Si