Caractérisation électrique des interfaces métal-semiconducteur

Issue		Rev. Phys. Appl. (Paris) Volume 22, Number 11, novembre 1987


Page(s)		1485 - 1493
DOI		10.1051/rphysap:0198700220110148500

Rev. Phys. Appl. (Paris) 22, 1485-1493 (1987)
DOI: 10.1051/rphysap:0198700220110148500

Caractérisation électrique des interfaces métal-semiconducteur

C. Barret, G.N. Lu et T. Neffati

Institut d'Electronique Fondamentale, UA 22 CNRS, Université Paris-Sud, bâtiment 220, 91405 Orsay Cedex, France

Abstract
An overview of the electrical characterization of metal-semiconductor interfaces is given. The need of an improvement in the accuracy of the barrier height measurements implies a better understanding in the non-idealities encountered on the I-V and C-V curves. On the other hand, the study of interface states by Schottky Capacitance Spectroscopy shows the existence of states energetically localized in the band gap and having a significant depth of penetration in the semiconductor. A model is developed from these points and provides a new way of interpretation of the main anomalous behaviours of the real electrical characteristics.

Résumé
Nous présentons un panorama des caractérisations électriques des interfaces métal-semiconducteur. Nous montrons que la nécessité d'effectuer des mesures de barrière précises implique une amélioration des interprétations des anomalies des caractéristiques I-V et C-V des diodes réelles. D'autre part, l'étude des états d'interface par Spectroscopie de Capacité Schottky met en évidence l'existence d'états bien localisés énergétiquement mais à profondeur de pénétration significative dans le semiconducteur. Une modélisation développée à partir de ces deux points permet d'interpréter de façon très simple les principaux comportements réels des caractéristiques électriques.

PACS
7330 - Surface double layers, Schottky barriers, and work functions.
7340N - Electrical properties of metal nonmetal contacts.
2530D - Semiconductor metal interfaces.

Key words
interface electron states -- Schottky effect -- semiconductor metal boundaries -- I V curves -- nonideality -- electrical characterization -- metal semiconductor interfaces -- barrier height -- C V curves -- interface states -- Schottky Capacitance Spectroscopy

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