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Issue Rev. Phys. Appl. (Paris)
Volume 24, Number 6, juin 1989
Page(s) 649 - 658
DOI 10.1051/rphysap:01989002406064900

Rev. Phys. Appl. (Paris) 24, 649-658 (1989)
DOI: 10.1051/rphysap:01989002406064900

Etude des effets parasites affectant le fonctionnement des transistors à effet de champ à gaz d'électrons bidimensionnel

S. Mottet1, J.M. Dumas1, J.E. Viallet1, A. Belhadj1 et P. Audren2

1  Centre National d'études des Télécommunications, 22301 Lannion Cedex, France
2  Institut Universitaire de Technologie, 22302 Lannion Cedex, France


Abstract
A study of the parasitic effects detrinental to the operation of two-dimensional electron gas field effect transistors (HEMTs) has been carried-out. These effects are strongly process-dependent. An experimental investigation and numerical simulations of the device permit the physical origin of these effects to be demonstrated : the residual doping level of the GaAs layer is a main parameter. We equally show that the epilayer growth parameters strongly influence on these effects.


Résumé
Nous avons mené une étude des effets parasites présentés par les transistors à effet de champ à gaz d'électrons bidimensionnel (HEMT). Ces effets sont étroitement liés à la technologie d'élaboration des composants. L'étude expérimentale, couplée à la simulation numérique du dispositif à permis de montrer l'origine physique de ces effets : le dopage résiduel de la couche de GaAs y joue un rôle prépondérant. L'étude montre également la sensibilité de ces effets aux paramètres technologiques de croissance des couches.

PACS
2560S - Other field effect devices.

Key words
aluminium compounds -- gallium arsenide -- high electron mobility transistors -- III V semiconductors -- molecular beam epitaxial growth -- numerical methods -- semiconductor epitaxial layers -- semiconductor growth -- molecular beam epitaxy -- semiconductor -- TEGFET -- parasitic effects -- two dimensional electron gas field effect transistors -- HEMTs -- numerical simulations -- residual doping level -- epilayer growth parameters -- GaAs AlGaAs GaAs




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