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Issue Rev. Phys. Appl. (Paris)
Volume 25, Number 9, septembre 1990
Page(s) 947 - 950
DOI 10.1051/rphysap:01990002509094700

Rev. Phys. Appl. (Paris) 25, 947-950 (1990)
DOI: 10.1051/rphysap:01990002509094700

Au/InSe Schottky barrier height determination

R. Mamy1, X. Zaoui1, J. Barrau1 et A. Chevy2

1  Laboratoire de Physique des Solides Associés au CNRS (URA 74), Université Paul Sabatier, 118 Route de Narbonne, 31062 Toulouse, Cedex, France
2  Laboratoire de Physique des Milieux Condensés, Université Pierre et Marie Curie, 4 Place Jussieu, 75252 Paris Cedex 05, France


Abstract
Au/InSe interface formation was studied and a microscopic Schottky barrier of 0.7 eV was measured in accordance with the value obtained by I( V) and photovoltage measurements. This barrier is formed for submonolayer coverage before any chemical reaction or interdiffusion is evidenced. Its value is not determined by the metal work function as is the case with non reactive metals (Schottky behavior) but may depend on initial interfacial interactions.


Résumé
Nous avons étudié la formation de l'interface Au/InSe et mesuré une barrière de Schottky microscopique de 0,7 eV en accord avec la valeur obtenue par des mesures I( V) et de photovoltage. Cette barrière est formée dès la monocouche avant toute détection de réaction chimique ou interdiffusion. Sa valeur n'est pas déterminée par le travail de sortie du métal comme supposé avec des métaux non réactifs (comportement de type Schottky) mais pourrait dépendre des premières interactions interfaciales.

PACS
7340N - Electrical properties of metal nonmetal contacts.
7330 - Surface double layers, Schottky barriers, and work functions.
7240 - Photoconduction and photovoltaic effects: photodielectric effects.

Key words
gold -- III VI semiconductors -- indium compounds -- photovoltaic effects -- Schottky effect -- semiconductor metal boundaries -- metal semiconductor junction -- I V characteristics -- Schottky barrier height -- Au InSe interface formation -- photovoltage measurements -- submonolayer coverage -- metal work function -- initial interfacial interactions -- Au InSe




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