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Issue Rev. Phys. Appl. (Paris)
Volume 25, Number 9, septembre 1990
Page(s) 957 - 961
DOI 10.1051/rphysap:01990002509095700

Rev. Phys. Appl. (Paris) 25, 957-961 (1990)
DOI: 10.1051/rphysap:01990002509095700

Dislocations d'interface et défauts de volume dans l'hétérostructure GaSb/GaAs

A. Rocher1, F.W.O. Da Silva2 et C. Raisin2

1  Centre d'Elaboration des Matériaux et d'Etudes Structurales, CEMES/LOE du CNRS, 29 rue Jeanne Marvig, 31400 Toulouse, France
2  LESIC, USTL, Place E. Bataillon, 34060 Montpellier, France


Abstract
GaSb on GaAs has been grown by Molecular Beam Epitaxy at 470 °C. At this temperature a 3-dimensional growth mode occurs at the first stage of the epitaxy. After GaSb island coalescence the growth mode becomes 2-dimensional. Misfit dislocations, due to a 8 % lattice mismatch, are Lomer type. The misfit dislocation network is well organized as a regular array. The very low density of threading defects is related to the low number of imperfections of this misfit dislocation network.


Résumé
Du GaSb a été déposé sur du GaAs par épitaxie par jets moléculaires à 470 °C. A cette température la croissance est tridimensionnelle dans les premiers stades de l'épitaxie. Après coalescence des îlots de GaSb, la croissance devient bidimensionnelle. Les dislocations liées au désaccord paramétrique de 8 % sont toutes de type Lomer. Elles sont organisées en réseau périodique à deux dimensions. La très faible densité de défauts expérimentalement observée est liée au nombre réduit d'imperfections qui existent au niveau du système de dislocations d'interface.

PACS
6865 - Low dimensional structures: growth, structure and nonelectronic properties.
6848 - Solid solid interfaces.
6170J - Etch pits, decoration, transmission electron microscopy and other direct observations of dislocations.
6855 - Thin film growth, structure, and epitaxy.

Key words
dislocations -- gallium arsenide -- gallium compounds -- III V semiconductors -- interface structure -- molecular beam epitaxial growth -- semiconductor junctions -- semiconductor -- interfacial dislocations -- 2D growth mode -- Lomer type dislocations -- threading defects -- GaSb GaAs heterostructure -- molecular beam epitaxy -- three dimensional growth mode -- GaSb island coalescence -- lattice mismatch -- misfit dislocation network -- regular array -- 470 degC -- GaSb GaAs -- GaAs




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