| Numéro |
Rev. Phys. Appl. (Paris)
Volume 25, Numéro 11, novembre 1990
|
|
|---|---|---|
| Page(s) | 1107 - 1108 | |
| DOI | https://doi.org/10.1051/rphysap:0199000250110110700 | |
Rev. Phys. Appl. (Paris) 25, 1107-1108 (1990)
DOI: 10.1051/rphysap:0199000250110110700
1 CNR-Istituto di Chimica e Tecnologia dei Materiali e dei Componenti per l'Elettronica (LAMEL), Via de' Castagnoli 1, 1-40126 Bologna, Italy
2 Max-Planck-Institut für Festkörperforschung, Heisenbergstrasse 1, D-7000 Stuttgart 80, F.R.G.
6170J - Etch pits, decoration, transmission electron microscopy and other direct observations of dislocations.
6116D - Electron microscopy determinations of structures.
7220J - Charge carriers: generation, recombination, lifetime, and trapping semiconductors/insulators.
Key words
EBIC -- electron hole recombination -- EBIC contrast -- dislocations -- intrinsic recombination -- electron beam induced current -- defect
DOI: 10.1051/rphysap:0199000250110110700
Comment on « EBIC contrast theory of dislocations: intrinsic recombination properties »
C. Donolato1 et L. Pasemann21 CNR-Istituto di Chimica e Tecnologia dei Materiali e dei Componenti per l'Elettronica (LAMEL), Via de' Castagnoli 1, 1-40126 Bologna, Italy
2 Max-Planck-Institut für Festkörperforschung, Heisenbergstrasse 1, D-7000 Stuttgart 80, F.R.G.
Abstract
It is shown that a recent analysis of the EBIC (electron beam induced current) contrast of a dislocation (J. L. Farvacque and B. Sieber, Revue Phys. Appl. 25 (1990) 353) has some mathematical flaws and yields the erroneous result that the contrast does not become equal to zero if the recombination activity of the defect vanishes.
Résumé
Nous montrons que les faiblesses mathématiques d'une analyse récente du contraste EBIC (electron beam induced current) d'une dislocation (J. L. Farvacque et B. Sieber, Revue Phys. Appl. 25 (1990) 353) conduit au résultat erroné que le contraste n'est pas égal à zéro lorsque l'activité électrique du défaut disparaît.
6170J - Etch pits, decoration, transmission electron microscopy and other direct observations of dislocations.
6116D - Electron microscopy determinations of structures.
7220J - Charge carriers: generation, recombination, lifetime, and trapping semiconductors/insulators.
Key words
EBIC -- electron hole recombination -- EBIC contrast -- dislocations -- intrinsic recombination -- electron beam induced current -- defect