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Article cité :
R. Triboulet
Rev. Phys. Appl. (Paris), 12 2 (1977) 123-128
Citations de cet article :
39 articles
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Modern Crystallography III
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Ellipsometric studies of electronic interband transitions inCdxHg1−xTe
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Growth and characterization of the complete Cd1-Zn Te alloy series
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Observation of short-order clustering effect in Cd1−xHgxTe
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CdTe growth by “multipass thm” and “sublimation thm”
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Study of acceptor states in CdTe by donor-acceptor pair excitation luminescence
G. Neu, Y. Marfaing, R. Legros, R. Triboulet and L. Svob Journal of Luminescence 21 (3) 293 (1980) https://doi.org/10.1016/0022-2313(80)90008-3
Concept of Force Variation Due to Charged Defects in Elemental and Compound Semiconductors
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Cadmium telluride and mercuric iodide gamma radiation detectors
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Lattice dynamics of Cd-rich Cd1−xHgxTe alloys
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Growth of high-purity ZnTe single crystals by the sublimation travelling heater method
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Crystal growth of CdTe for γ-ray detectors
F.V. Wald and G. Entine Nuclear Instruments and Methods 150 (1) 13 (1978) https://doi.org/10.1016/0029-554X(78)90451-2