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Article cité :
B. Lunn , V. Bettridge
Rev. Phys. Appl. (Paris), 12 2 (1977) 151-154
Citations de cet article :
15 articles
CdTe and Related Compounds; Physics, Defects, Hetero- and Nano-structures, Crystal Growth, Surfaces and Applications
CdTe and Related Compounds; Physics, Defects, Hetero- and Nano-structures, Crystal Growth, Surfaces and Applications 1 (2010) https://doi.org/10.1016/B978-0-08-096513-0.00001-7
Experimental assessment of metal solvents for low-temperature liquid-phase epitaxy of silicon carbide
Michael G. Mauk, Bryan W. Feyock, Archana Sharma and Robert G. Hunsperger Journal of Crystal Growth 225 (2-4) 322 (2001) https://doi.org/10.1016/S0022-0248(01)00887-9
Floating-zone melting of CdTe
Wen-Ming Chang, W.R. Wilcox and L. Regel Materials Science and Engineering: B 16 (1-3) 23 (1993) https://doi.org/10.1016/0921-5107(93)90007-A
Structural properties of crystals of CdTe grown from the vapour phase
K. Durose, G.J. Russell and J. Woods Journal of Crystal Growth 72 (1-2) 85 (1985) https://doi.org/10.1016/0022-0248(85)90122-8
Properties of CdTe crystals grown by THM using Cd as the solvent
R. Triboulet, R. Legros, A. Heurtel, et al. Journal of Crystal Growth 72 (1-2) 90 (1985) https://doi.org/10.1016/0022-0248(85)90123-X
Growth of CdTe by solvent evaporation
A.W. Vere, V. Steward, C.A. Jones, D.J. Williams and N. Shaw Journal of Crystal Growth 72 (1-2) 97 (1985) https://doi.org/10.1016/0022-0248(85)90124-1
The microhardness of CdxHg1-xTe
S. Cole, M. Brown and A. F. W. Willoughby Journal of Materials Science 17 (7) 2061 (1982) https://doi.org/10.1007/BF00540424
Electrical properties of Au/n-CdTe Schottky diodes
I M Dharmadasa, G G Roberts and M C Petty Journal of Physics D: Applied Physics 15 (5) 901 (1982) https://doi.org/10.1088/0022-3727/15/5/018
Crystal growth and characterisation of cadmium telluride: A modified solvent evaporation technique
J.B. Mullin, C.A. Jones, B.W. Straughan and A. Royle Journal of Crystal Growth 59 (1-2) 135 (1982) https://doi.org/10.1016/0022-0248(82)90314-1
Minority carrier diffusion length in CdTe
D.R. Wight, D. Bradley, G. Williams, et al. Journal of Crystal Growth 59 (1-2) 323 (1982) https://doi.org/10.1016/0022-0248(82)90345-1
The growth by MOVPE and characterisation of CdxHg1−xTe
S.J.C. Irvine and J.B. Mullin Journal of Crystal Growth 55 (1) 107 (1981) https://doi.org/10.1016/0022-0248(81)90277-3
Vapour phase epitaxy of CdxHg1-xTe using organometallics
J B Mullin and S J C Irvine Journal of Physics D: Applied Physics 14 (9) L149 (1981) https://doi.org/10.1088/0022-3727/14/9/005
Radiation-induced defects and their annealing behavior in cadmium telluride
Tsunemasa Taguchi and Yoshio Inuishi Journal of Applied Physics 51 (9) 4757 (1980) https://doi.org/10.1063/1.328307
Electrical properties of CdTe:Cl
M C Petty, I M Dharmadasa and G G Roberts Journal of Physics D: Applied Physics 13 (10) 1899 (1980) https://doi.org/10.1088/0022-3727/13/10/019
Activation Energy Analysis of Defect Levels in Semi-Insulating CDTE Detector Material
Krishna P. Pande and G. G. Roberts IEEE Transactions on Nuclear Science 24 (5) 2017 (1977) https://doi.org/10.1109/TNS.1977.4329150