La fonctionnalité Article cité par… liste les citations d'un article. Ces citations proviennent de la base de données des articles de EDP Sciences, ainsi que des bases de données d'autres éditeurs participant au programme CrossRef Cited-by Linking Program . Vous pouvez définir une alerte courriel pour être prévenu de la parution d'un nouvel article citant " cet article (voir sur la page du résumé de l'article le menu à droite).
Article cité :
G. Schols , H. Maes , G. Declerck , R. van Overstraeten
Rev. Phys. Appl. (Paris), 13 12 (1978) 825-828
Citations de cet article :
14 articles
Response of interface traps during high-temperature anneals (MOSFETs)
A.J. Lelis, T.R. Oldham and W.M. DeLancey IEEE Transactions on Nuclear Science 38 (6) 1590 (1991) https://doi.org/10.1109/23.124150
Effects of nitrogen and argon as carrier gases and annealing ambients on the physical properties of PECVD silicon nitride
Q.A. Shams and W.D. Brown Microelectronics Journal 20 (6) 49 (1989) https://doi.org/10.1016/0026-2692(89)90067-0
Effects of post-deposition argon implantation on the memory properties of plasma-deposited silicon nitride films
Q. A. Shams and W. D. Brown Journal of Applied Physics 66 (7) 3131 (1989) https://doi.org/10.1063/1.344148
Trends in semiconductor memories
H.E. Maes, G. Groeseneken, H. Lebon and J. Witters Microelectronics Journal 20 (1-2) 9 (1989) https://doi.org/10.1016/0026-2692(89)90122-5
Models of Si-SiO2interface reactions
M L Reed Semiconductor Science and Technology 4 (12) 980 (1989) https://doi.org/10.1088/0268-1242/4/12/003
Chemistry of Si-SiO2 interface trap annealing
Michael L. Reed and James D. Plummer Journal of Applied Physics 63 (12) 5776 (1988) https://doi.org/10.1063/1.340317
Kinetic Studies of Silicon - Silicon Dioxide Interface Trap Annealing Using Rapid Thermal Processing
Michael L. Reed and James D. Plummer MRS Proceedings 52 (1985) https://doi.org/10.1557/PROC-52-333
Thermally annealed silicon nitride films: Electrical characteristics and radiation effects
Herman J. Stein Journal of Applied Physics 57 (6) 2040 (1985) https://doi.org/10.1063/1.334393
Post-deposition high temperature processing of silicon nitride
H.J. Stein, P.S. Peercy and R.J. Sokel Thin Solid Films 101 (4) 291 (1983) https://doi.org/10.1016/0040-6090(83)90096-2
1/f noise in thin oxide p-channel metal–nitride–oxide–silicon transistors
Herman E. Maes and Sabir H. Usmani Journal of Applied Physics 54 (4) 1937 (1983) https://doi.org/10.1063/1.332248
Ion beam hydrogenation of polysilicon coated thermal oxide on silicon
J. Belson Radiation Effects 65 (1-4) 95 (1982) https://doi.org/10.1080/00337578208216823
Charge pumping measurements on stepped-gate metal-nitride-oxide-silicon memory transistors
H. E. Maes and S. H. Usmani Journal of Applied Physics 53 (10) 7106 (1982) https://doi.org/10.1063/1.330021
Influence of a high-temperature hydrogen anneal on the memory characteristics of p-channel MNOS transistors
Herman E. Maes and Guido L. Heyns Journal of Applied Physics 51 (5) 2706 (1980) https://doi.org/10.1063/1.327931
High-temperature H2 anneal of interface defects in electron-beam-irradiated MNOS structures
G. A. Schols, H. E. Maes and R. J. Van Overstraeten Journal of Applied Physics 51 (6) 3194 (1980) https://doi.org/10.1063/1.328071