Article cité par

La fonctionnalité Article cité par… liste les citations d'un article. Ces citations proviennent de la base de données des articles de EDP Sciences, ainsi que des bases de données d'autres éditeurs participant au programme CrossRef Cited-by Linking Program. Vous pouvez définir une alerte courriel pour être prévenu de la parution d'un nouvel article citant " cet article (voir sur la page du résumé de l'article le menu à droite).

Article cité :

Response of interface traps during high-temperature anneals (MOSFETs)

A.J. Lelis, T.R. Oldham and W.M. DeLancey
IEEE Transactions on Nuclear Science 38 (6) 1590 (1991)
https://doi.org/10.1109/23.124150

Effects of nitrogen and argon as carrier gases and annealing ambients on the physical properties of PECVD silicon nitride

Q.A. Shams and W.D. Brown
Microelectronics Journal 20 (6) 49 (1989)
https://doi.org/10.1016/0026-2692(89)90067-0

Effects of post-deposition argon implantation on the memory properties of plasma-deposited silicon nitride films

Q. A. Shams and W. D. Brown
Journal of Applied Physics 66 (7) 3131 (1989)
https://doi.org/10.1063/1.344148

Chemistry of Si-SiO2 interface trap annealing

Michael L. Reed and James D. Plummer
Journal of Applied Physics 63 (12) 5776 (1988)
https://doi.org/10.1063/1.340317

Kinetic Studies of Silicon - Silicon Dioxide Interface Trap Annealing Using Rapid Thermal Processing

Michael L. Reed and James D. Plummer
MRS Proceedings 52 (1985)
https://doi.org/10.1557/PROC-52-333

Thermally annealed silicon nitride films: Electrical characteristics and radiation effects

Herman J. Stein
Journal of Applied Physics 57 (6) 2040 (1985)
https://doi.org/10.1063/1.334393

1/f noise in thin oxide p-channel metal–nitride–oxide–silicon transistors

Herman E. Maes and Sabir H. Usmani
Journal of Applied Physics 54 (4) 1937 (1983)
https://doi.org/10.1063/1.332248

Charge pumping measurements on stepped-gate metal-nitride-oxide-silicon memory transistors

H. E. Maes and S. H. Usmani
Journal of Applied Physics 53 (10) 7106 (1982)
https://doi.org/10.1063/1.330021

Influence of a high-temperature hydrogen anneal on the memory characteristics of p-channel MNOS transistors

Herman E. Maes and Guido L. Heyns
Journal of Applied Physics 51 (5) 2706 (1980)
https://doi.org/10.1063/1.327931

High-temperature H2 anneal of interface defects in electron-beam-irradiated MNOS structures

G. A. Schols, H. E. Maes and R. J. Van Overstraeten
Journal of Applied Physics 51 (6) 3194 (1980)
https://doi.org/10.1063/1.328071