EDP Sciences logo
Authentification abonné
Rechercher
Menu

Article cité par

La fonctionnalité Article cité par… liste les citations d'un article. Ces citations proviennent de la base de données des articles de EDP Sciences, ainsi que des bases de données d'autres éditeurs participant au programme CrossRef Cited-by Linking Program. Vous pouvez définir une alerte courriel pour être prévenu de la parution d'un nouvel article citant " cet article (voir sur la page du résumé de l'article le menu à droite).

Article cité :

Differential Hall Effect Metrology for Electrical Characterization of Advanced Semiconductor Layers

Bulent M. Basol and Abhijeet Joshi
Metrology 4 (4) 547 (2024)
https://doi.org/10.3390/metrology4040034

Study of Dopant Activation in Silicon Employing Differential Hall Effect Metrology (DHEM)

Abhijeet Joshi and Bulent M. Basol
IEEE Journal of the Electron Devices Society 10 757 (2022)
https://doi.org/10.1109/JEDS.2022.3148048

Determination of doping and mobility profiles by automatic electrical measurements and anodic stripping

L Bouro and D Tsoukalas
Journal of Physics E: Scientific Instruments 20 (5) 541 (1987)
https://doi.org/10.1088/0022-3735/20/5/013

Influence of nucleation on the kinetics of boron precipitation in silicon

E. Landi, S. Guimaraes and S. Solmi
Applied Physics A Solids and Surfaces 44 (2) 135 (1987)
https://doi.org/10.1007/BF00626414

Fully automatic apparatus for the determination of doping profiles in Si by electrical measurements and anodic stripping

R. Galloni and A. Sardo
Review of Scientific Instruments 54 (3) 369 (1983)
https://doi.org/10.1063/1.1137376

Experimental and computer analysis of P+-ion penetration tails in a SIO2-Si two-layer system

A. Desalvo, R. Galloni, R. Rosa and F. Zignani
Journal of Applied Physics 51 (4) 1994 (1980)
https://doi.org/10.1063/1.327915