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Article cité :
A. Mitonneau , A. Mircea , G.M. Martin , D. Pons
Rev. Phys. Appl. (Paris), 14 10 (1979) 853-861
Citations de cet article :
148 articles | Pages :
Electron capture and emission for midgap centers
J.S. Blakemore Journal of Physics and Chemistry of Solids 49 (6) 627 (1988) https://doi.org/10.1016/0022-3697(88)90193-X
Native defects in gallium arsenide
J. C. Bourgoin, H. J. von Bardeleben and D. Stiévenard Journal of Applied Physics 64 (9) R65 (1988) https://doi.org/10.1063/1.341206
A DLTS analysis of electron and hole traps in proton implanted VPE grown n-GaAs using schottky barrier diodes
F. D. Auret, M. Nel and H. C. Snyman Radiation Effects 105 (3-4) 225 (1988) https://doi.org/10.1080/00337578808229949
Revised role for the Poole–Frenkel effect in deep-level characterization
W. R. Buchwald and N. M. Johnson Journal of Applied Physics 64 (2) 958 (1988) https://doi.org/10.1063/1.341907
III-V Compound Semiconductors and Semiconductor Properties of Superionic Materials
Zou Yuanxi Semiconductors and Semimetals, III-V Compound Semiconductors and Semiconductor Properties of Superionic Materials 26 1 (1988) https://doi.org/10.1016/S0080-8784(08)60119-2
Thermal activation energies of undoped semi-insulating LEC GaAs. Correlation of TDH and TSC results
W. Siegel, H. Witte, G. Kühnel, H. A. Schneider and T. Flande Physica Status Solidi (a) 108 (2) 689 (1988) https://doi.org/10.1002/pssa.2211080226
Minority-carrier emission effect in deep level transient spectroscopy measurements on Schottky diodes
W. I. Lee and J. M. Borrego Journal of Applied Physics 63 (11) 5357 (1988) https://doi.org/10.1063/1.340352
Minority carrier diffusion lengths in bulkn-type gaas
Liang Bingwen, Zou Yuanxi, Zhou Binglin and A. G. Milnes Journal of Electronic Materials 16 (3) 177 (1987) https://doi.org/10.1007/BF02655483
Evidence for EL6 (E
c− 0.35 eV) acting as a dominant recombination center in n-type horizontal Bridgman GaAs
Zhao-Qiang Fang, T. E. Schlesinger and A. G. Milnes Journal of Applied Physics 61 (11) 5047 (1987) https://doi.org/10.1063/1.338327
DLTS characterization of proton implantation defects in P-type GaAs by using schottky barrier diodes
M. Nel and F. D. Auret Radiation Effects 103 (1-4) 197 (1987) https://doi.org/10.1080/00337578708221252
Optically induced long-lifetime photoconductivity in semi-insulating bulk GaAs
J. Jiménez, P. Hernández, J. A. de Saja and J. Bonnafé Physical Review B 35 (8) 3832 (1987) https://doi.org/10.1103/PhysRevB.35.3832
Effects of Growth Conditions on EL-2 Concentration in OMVPE- GaAs
R. Venkatasubramanian, W. I. Lee, S. K. Ghandhi and J. M. Borrego MRS Proceedings 104 (1987) https://doi.org/10.1557/PROC-104-397
Distortions in optical deep level transient spectroscopy on semi-insulating GaAs with a conducting layer of finite thickness
Steven K. Brierley Journal of Applied Physics 61 (2) 567 (1987) https://doi.org/10.1063/1.338260
Discovery of electron traps in lpe gaas grown from a bismuth melt
N. A. Yakusheva, V. Ya. Prinz and Yu. B. Bolkhovityanov physica status solidi (a) 95 (1) K43 (1986) https://doi.org/10.1002/pssa.2210950155
An experimental study on deep level incorporation and background doping in hydride VPE GaAs
B. Diegner, H. Weinert, R. Pickenhain and W. Hörig physica status solidi (a) 97 (1) 313 (1986) https://doi.org/10.1002/pssa.2210970131
An acceptorlike electron trap in GaAs related to Ni
S. Brehme and R. Pickenhain Solid State Communications 59 (7) 469 (1986) https://doi.org/10.1016/0038-1098(86)90690-3
Anomalous majority-carrier peaks in deep level transient spectroscopy
Steven K. Brierley Journal of Applied Physics 59 (1) 168 (1986) https://doi.org/10.1063/1.336856
Evaluation of a defect capture cross section for minority carriers: Application to GaAs
D. Stievenard and J. C. Bourgoin Journal of Applied Physics 59 (3) 808 (1986) https://doi.org/10.1063/1.336602
A Tentative Identification of Certain Deep Levels in GaAs and Related Compounds
Zou Yuanxi, Chou Yuanhsi, Mo Peigen, et al. MRS Proceedings 46 (1985) https://doi.org/10.1557/PROC-46-385
Effect of potential fluctuations on the transport properties and the photoconductivity of compensated semiconductors. Application to semi-insulating GaAs. II. Excess carrier lifetimes and photoconductivity
B. Pistoulet, P. Girard and G. Hamamdjian Journal of Applied Physics 56 (8) 2275 (1984) https://doi.org/10.1063/1.334261
Deep states in GaAs grown by molecular beam epitaxy
P. Blood and J. J. Harris Journal of Applied Physics 56 (4) 993 (1984) https://doi.org/10.1063/1.334040
Electrical and optical properties of MOVPE grown GaAs1−x P x
P. Omling, L. Samuelson, H. Titze and H. G. Grimmeiss Il Nuovo Cimento D 2 (6) 1742 (1983) https://doi.org/10.1007/BF02457860
Advances in Electronics and Electron Physics Volume 61
A.G. Milnes Advances in Electronics and Electron Physics, Advances in Electronics and Electron Physics Volume 61 61 63 (1983) https://doi.org/10.1016/S0065-2539(08)60189-4
Influence of a Strong Electric Field on the Carrier Capture by Nonradiative Deep‐Level Centers in GaAs
V. Ya. Prinz and S. N. Rechkunov physica status solidi (b) 118 (1) 159 (1983) https://doi.org/10.1002/pssb.2221180119
Manifestations of deep levels point defects in GaAs
G.M. Martin and S. Makram-Ebeid Physica B+C 116 (1-3) 371 (1983) https://doi.org/10.1016/0378-4363(83)90276-0
Semiconductors and Semimetals
David C. Look Semiconductors and Semimetals 19 75 (1983) https://doi.org/10.1016/S0080-8784(08)60275-6
Backdating in GaAs MESFET's
C. Kocot and C.A. Stolte IEEE Transactions on Microwave Theory and Techniques 30 (7) 963 (1982) https://doi.org/10.1109/TMTT.1982.1131184
Detailed optical characterization of the deep cr level in gaas
A. Nouailhat, F. Litty, S. Loualiche, P. Leyral and G. Guillot Journal de Physique 43 (5) 815 (1982) https://doi.org/10.1051/jphys:01982004305081500
Photo-Hall effect and photoconductivity in p-type epitaxial GaAs:Cr
B K Ridley, M C Arikan, P J Bishop, M F M Hassan and W V Machado Journal of Physics C: Solid State Physics 15 (33) 6865 (1982) https://doi.org/10.1088/0022-3719/15/33/022
Electric-Field-Induced Phonon-Assisted Tunnel Ionization from Deep Levels in Semiconductors
S. Makram-Ebeid and M. Lannoo Physical Review Letters 48 (18) 1281 (1982) https://doi.org/10.1103/PhysRevLett.48.1281
Quantum model for phonon-assisted tunnel ionization of deep levels in a semiconductor
S. Makram-Ebeid and M. Lannoo Physical Review B 25 (10) 6406 (1982) https://doi.org/10.1103/PhysRevB.25.6406
Intrinsic density n
i (T) in GaAs: Deduced from band gap and effective mass parameters and derived independently from Cr acceptor capture and emission coefficients
J. S. Blakemore Journal of Applied Physics 53 (1) 520 (1982) https://doi.org/10.1063/1.329958
Electron irradiation effects in p-type GaAs
S. Loualiche, A. Nouailhat, G. Guillot, M. Gavand, A. Laugier and J. C. Bourgoin Journal of Applied Physics 53 (12) 8691 (1982) https://doi.org/10.1063/1.330467
A novel crystal growth method for GaAs: The liquid encapsulated kyropoulos method
G. Jacob Journal of Crystal Growth 58 (2) 455 (1982) https://doi.org/10.1016/0022-0248(82)90295-0
Deep-center photoluminescence in undoped semi-insulating GaAs: 0.68 eV band due to the main deep donor
Phil Won Yu Solid State Communications 43 (12) 953 (1982) https://doi.org/10.1016/0038-1098(82)90937-1
Spectroscopic line fitting to DLTS data
J.E. Stannard, H.M. Day, M.L. Bark and S.H. Lee Solid-State Electronics 24 (11) 1009 (1981) https://doi.org/10.1016/0038-1101(81)90128-3
Non-radiative transitions in semiconductors
A M Stoneham Reports on Progress in Physics 44 (12) 1251 (1981) https://doi.org/10.1088/0034-4885/44/12/001
Interpretation of luminescence in GaAs : Cr : 0.839 eV and 0.574 eV lines
G. Picoli, B. Deveaud and D. Galland Journal de Physique 42 (1) 133 (1981) https://doi.org/10.1051/jphys:01981004201013300
Semi-Insulating III–V Materials
J. S. Blakemore Semi-Insulating III–V Materials 29 (1980) https://doi.org/10.1007/978-1-4684-9193-7_3
Semi-Insulating III–V Materials
B. Deveaud and B. Toulouse Semi-Insulating III–V Materials 241 (1980) https://doi.org/10.1007/978-1-4684-9193-7_30
Compensation mechanisms in GaAs
G. M. Martin, J. P. Farges, G. Jacob, J. P. Hallais and G. Poiblaud Journal of Applied Physics 51 (5) 2840 (1980) https://doi.org/10.1063/1.327952
Determination of the free energy level of deep centers, with application to GaAs
D. Pons Applied Physics Letters 37 (4) 413 (1980) https://doi.org/10.1063/1.91926
Semi-Insulating III–V Materials
A. Goltzene, C. Schwab and G. M. Martin Semi-Insulating III–V Materials 221 (1980) https://doi.org/10.1007/978-1-4684-9193-7_27
Energy dependence of deep level introduction in electron irradiated GaAs
D. Pons, P. M. Mooney and J. C. Bourgoin Journal of Applied Physics 51 (4) 2038 (1980) https://doi.org/10.1063/1.327923
Detailed electrical characterisation of the deep Cr acceptor in GaAs
G M Martin, A Mitonneau, D Pons, A Mircea and D W Woodward Journal of Physics C: Solid State Physics 13 (20) 3855 (1980) https://doi.org/10.1088/0022-3719/13/20/009
Effect of electric field on deep-level transients in GaAs and GaP
S. Makram-Ebeid Applied Physics Letters 37 (5) 464 (1980) https://doi.org/10.1063/1.91966
Semi-Insulating III–V Materials
G. M. Martin Semi-Insulating III–V Materials 13 (1980) https://doi.org/10.1007/978-1-4684-9193-7_2
Effect of Electric Field and Current Injection on the Main Electron Trap in Bulk GaAs
S. Makram–Ebeid MRS Proceedings 2 (1980) https://doi.org/10.1557/PROC-2-495
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