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Article cité :

Native defects in gallium arsenide

J. C. Bourgoin, H. J. von Bardeleben and D. Stiévenard
Journal of Applied Physics 64 (9) R65 (1988)
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A DLTS analysis of electron and hole traps in proton implanted VPE grown n-GaAs using schottky barrier diodes

F. D. Auret, M. Nel and H. C. Snyman
Radiation Effects 105 (3-4) 225 (1988)
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Revised role for the Poole–Frenkel effect in deep-level characterization

W. R. Buchwald and N. M. Johnson
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III-V Compound Semiconductors and Semiconductor Properties of Superionic Materials

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Thermal activation energies of undoped semi-insulating LEC GaAs. Correlation of TDH and TSC results

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Minority-carrier emission effect in deep level transient spectroscopy measurements on Schottky diodes

W. I. Lee and J. M. Borrego
Journal of Applied Physics 63 (11) 5357 (1988)
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Zhao-Qiang Fang, T. E. Schlesinger and A. G. Milnes
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Optically induced long-lifetime photoconductivity in semi-insulating bulk GaAs

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Effects of Growth Conditions on EL-2 Concentration in OMVPE- GaAs

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Journal of Applied Physics 61 (2) 567 (1987)
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Advances in Electronics and Electron Physics Volume 61

A.G. Milnes
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Influence of a Strong Electric Field on the Carrier Capture by Nonradiative Deep‐Level Centers in GaAs

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J. S. Blakemore
Journal of Applied Physics 53 (1) 520 (1982)
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Electron irradiation effects in p-type GaAs

S. Loualiche, A. Nouailhat, G. Guillot, M. Gavand, A. Laugier and J. C. Bourgoin
Journal of Applied Physics 53 (12) 8691 (1982)
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Compensation mechanisms in GaAs

G. M. Martin, J. P. Farges, G. Jacob, J. P. Hallais and G. Poiblaud
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Determination of the free energy level of deep centers, with application to GaAs

D. Pons
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Energy dependence of deep level introduction in electron irradiated GaAs

D. Pons, P. M. Mooney and J. C. Bourgoin
Journal of Applied Physics 51 (4) 2038 (1980)
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G M Martin, A Mitonneau, D Pons, A Mircea and D W Woodward
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