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${S}$
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Ilya A. Prudaev, Vladimir L. Oleinik, Tatyana E. Smirnova, et al. IEEE Transactions on Electron Devices 65 (8) 3339 (2018) https://doi.org/10.1109/TED.2018.2845543
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M. A. Reshchikov, A. Usikov, H. Helava, et al. Scientific Reports 7 (1) (2017) https://doi.org/10.1038/s41598-017-08570-1
Jitendra Prajapati, Mrinmoy Bharadwaj, Amitabh Chatterjee and Ratnajit Bhattacharjee 140 (2017) https://doi.org/10.1109/NEMO.2017.7964213
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M. W. Gerber and R. N. Kleiman Journal of Applied Physics 121 (22) (2017) https://doi.org/10.1063/1.4984967
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I. Eliyahu, S. Druzhyna, Y. Horowitz, et al. Radiation Measurements 90 27 (2016) https://doi.org/10.1016/j.radmeas.2015.12.035
Martin Gerber and Rafael Kleiman 1 (2015) https://doi.org/10.1109/PVSC.2015.7356034
Jean-Christophe Nallatamby, Ahmad Al-Hajjar, Sylvain Laurent and Michel Prigent 304 (2014) https://doi.org/10.1109/IMaRC.2014.7039047
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V.N. Trukhin, A.S. Buyskih, A.D. Buravlev, G.E. Cirlin, M. A. Kaliteevski, L.L. Samoilov and Yu. B. Samsonenko 1 (2013) https://doi.org/10.1109/IRMMW-THz.2013.6665449
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Kevin A. Boulais, Francisco Santiago, Peter L. Wick, et al. IEEE Transactions on Electron Devices 60 (2) 793 (2013) https://doi.org/10.1109/TED.2012.2235070
Ahmad Al Hajjar, Khaled Abdel Hadi, Jean-Christophe Nallatamby and Michel Prigent 1 (2013) https://doi.org/10.1109/MMS.2013.6663109
Khaled Abdel Hadi, Ahmad Al Hajjar, Jean-Christophe Nallatamby, Michel Prigent, Jean-Claude Jacquet, Sylvain Delage and Didier Floriot 1 (2013) https://doi.org/10.1109/ICNF.2013.6578957
Thermally and Optically Stimulated Luminescence
Thermally and Optically Stimulated Luminescence 371 (2011) https://doi.org/10.1002/9781119993766.refs
Electric-Field-Enhanced Neutralization of Deep Centers in GaAs
D. G. Eshchenko, V. G. Storchak, S. P. Cottrell and E. Morenzoni Physical Review Letters 103 (21) (2009) https://doi.org/10.1103/PhysRevLett.103.216601
Photoresistances of semi-insulating GaAs photoconductive switch illuminated by 1.064 μm laser pulse
Minghe Wu, Xiaoming Zheng, Chengli Ruan, et al. Journal of Applied Physics 106 (2) (2009) https://doi.org/10.1063/1.3172668
Springer Handbook of Electronic and Photonic Materials
Mike Brozel Springer Handbook of Electronic and Photonic Materials 499 (2006) https://doi.org/10.1007/978-0-387-29185-7_23
Electric-field-enhanced electron capture coefficient of EL2 level in semi-insulating GaAs
M. Kiyama, M. Tatsumi and M. Yamada Applied Physics Letters 86 (1) (2005) https://doi.org/10.1063/1.1844040
Impurities and Defects in Group IV Elements, IV-IV and III-V Compounds. Part b: Group IV-IV and III-V Compounds.
Landolt-Börnstein - Group III Condensed Matter, Impurities and Defects in Group IV Elements, IV-IV and III-V Compounds. Part b: Group IV-IV and III-V Compounds. b 1 (2003) https://doi.org/10.1007/10860305_97
The impact of deep levels on the photocurrent transients in semi-insulating GaAs
M. Pavlović, B. Šantić, D. I. Desnica-Franković, et al. Journal of Electronic Materials 32 (10) 1100 (2003) https://doi.org/10.1007/s11664-003-0094-2
Two-dimensional analysis of substrate-trap effects on turn-on characteristics in GaAs MESFETs
K. Horio, A. Wakabayashi and T. Yamada IEEE Transactions on Electron Devices 47 (3) 617 (2000) https://doi.org/10.1109/16.824738
Theory of scanning tunneling microscopy of defects on semiconductor surfaces
X. de la Broïse, C. Delerue, M. Lannoo, B. Grandidier and D. Stiévenard Physical Review B 61 (3) 2138 (2000) https://doi.org/10.1103/PhysRevB.61.2138
The energy level of the EL2 defect in GaAs
J.C. Bourgoin and T. Neffati Solid-State Electronics 43 (1) 153 (1999) https://doi.org/10.1016/S0038-1101(98)00199-3
Effect of high-temperature annealing on electrical and optical properties of undoped semi-insulating GaAs
Z.-Q. Fang, D. C. Reynolds, D. C. Look, N. G. Paraskevopoulos, T. E. Anderson and R. L. Jones Journal of Applied Physics 83 (1) 260 (1998) https://doi.org/10.1063/1.366680
Semiconductors and Semimetals
Pawel Trautman, Michal Baj and Jacek M. Baranowski Semiconductors and Semimetals 54 427 (1998) https://doi.org/10.1016/S0080-8784(08)60233-1
Ultrafast excitonic room temperature nonlinearity in neutron irradiated quantum wells
S. Ten, J. G. Williams, P. T. Guerreiro, G. Khitrova and N. Peyghambarian Applied Physics Letters 70 (2) 158 (1997) https://doi.org/10.1063/1.118346
Microscopic nature of thermally stimulated current and electrical compensation in semi-insulating GaAs
S. Kuisma, K. Saarinen, P. Hautojärvi, Z.-Q. Fang and D. Look Journal of Applied Physics 81 (8) 3512 (1997) https://doi.org/10.1063/1.364705
Simple measurement of 300 K electron capture cross section for EL2 in GaAs
D. C. Look and Z.-Q. Fang Journal of Applied Physics 80 (6) 3590 (1996) https://doi.org/10.1063/1.363233
K. Horio and K. Satoh 353 (1996) https://doi.org/10.1109/SIM.1996.571118
J. Kruger, Yan Chin Shih, Liu Xiao, C.L. Wang, J.D. Morse, M. Rogalla, K. Runge and E.R. Weber 345 (1996) https://doi.org/10.1109/SIM.1996.571116
2-D simulation of kink-related sidegating effects in GaAs MESFETs
Kasuoki Usami and Kazushige Horio Solid-State Electronics 39 (12) 1737 (1996) https://doi.org/10.1016/S0038-1101(96)00116-5
Carrier trapping in ultrafast metal-semiconductor-metal photodetectors on InGaAs/GaAs-on-GaAs superlattices
J. Hugi, Y. Haddab, R. Sachot and M. Ilegems Journal of Applied Physics 77 (4) 1785 (1995) https://doi.org/10.1063/1.358875
Two-dimensional analysis of substrate-related kink phenomena in GaAs MESFET's
K. Horio and K. Satoh IEEE Transactions on Electron Devices 41 (12) 2256 (1994) https://doi.org/10.1109/16.337436
Two-dimensional simulations of drain-current transients in GaAs MESFET's with semi-insulating substrates compensated by deep levels
K. Horio and Y. Fuseya IEEE Transactions on Electron Devices 41 (8) 1340 (1994) https://doi.org/10.1109/16.297727
A review article on the transport properties in fatfets upon irradiation
P. C. Euthymiou, C. D. Kourkoutas, B. Szentpáli, et al. Acta Physica Hungarica 74 (1-2) 7 (1994) https://doi.org/10.1007/BF03055233
Investigation of transient transport and recombination phenomena in semiinsulating GaAs
V. Kažukauskas and J. Vaitkus Zeitschrift für Physik B Condensed Matter 94 (4) 401 (1994) https://doi.org/10.1007/BF01317402
Yi Liu, Zhiping Yu, R.W. Dutton and M.D. Deal 911 (1994) https://doi.org/10.1109/IEDM.1994.383265
Effects of 1-MeV neutron irradiation on the operation of a bistable optically controlled semiconductor switch (BOSS)
D.C. Stoudt, R.P. Brinkmann, R.A. Roush, et al. IEEE Transactions on Electron Devices 41 (6) 913 (1994) https://doi.org/10.1109/16.293301
NewAsGarelated center in GaAs
D. C. Look, Z-Q. Fang, J. R. Sizelove and C. E. Stutz Physical Review Letters 70 (4) 465 (1993) https://doi.org/10.1103/PhysRevLett.70.465
Imperfections in III/V Materials
Maria Kaminska and Eicke R. Weber Semiconductors and Semimetals, Imperfections in III/V Materials 38 59 (1993) https://doi.org/10.1016/S0080-8784(08)62798-2
Two‐dimensional analysis of cutoff frequencies of GaAs MESFETS with various substrate conditions (invited article)
Kazushige Horio International Journal of Microwave and Millimeter-Wave Computer-Aided Engineering 3 (3) 230 (1993) https://doi.org/10.1002/mmce.4570030310
Numerical fitting of transient decays in the high defect density limit
S. Yang and C. D. Lamp Journal of Applied Physics 74 (11) 6636 (1993) https://doi.org/10.1063/1.355105
Minority carrier capture cross section of the EL2 defect in GaAs
M. A. Zaidi, H. Maaref and J. C. Bourgoin Applied Physics Letters 61 (20) 2452 (1992) https://doi.org/10.1063/1.108149
Terahertz Beams: Generation and Spectroscopy
Stephen E. Ralph and D. Grischkowsky MRS Proceedings 261 (1992) https://doi.org/10.1557/PROC-261-89
Two-dimensional simulation of GaAs MESFETs with deep acceptors in the semi-insulating substrate
Kazushige Horio, Kazuhiro Asada and Hisayoshi Yanai Solid-State Electronics 34 (4) 335 (1991) https://doi.org/10.1016/0038-1101(91)90162-R
Effect of electron irradiation on the mobility profile in GaAs FATFETs
B. Szentpali, B. Kovacs, D. Huber, et al. Solid State Communications 80 (5) 321 (1991) https://doi.org/10.1016/0038-1098(91)90138-L
Simplified simulations of GaAs MESFET's with semi-insulating substrate compensated by deep levels
K. Horio, Y. Fuseya, H. Kusuki and H. Yanai IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems 10 (10) 1295 (1991) https://doi.org/10.1109/43.88925
Detection of deep levels and compensation mechanism in undoped, liquid-encapsulated Czochralski n-type GaAs
W. Siegel, G. Kühnel, H. A. Schneider, H. Witte and T. Flade Journal of Applied Physics 69 (4) 2245 (1991) https://doi.org/10.1063/1.348703
Negative-U properties of off-centre substitutional oxygen in gallium arsenide
H Ch Alt Semiconductor Science and Technology 6 (10B) B121 (1991) https://doi.org/10.1088/0268-1242/6/10B/023
Internal friction and symmetry of intrinsic point defects in GaAs
D. Laszig, H. G. Brion and P. Haasen Physical Review B 44 (8) 3695 (1991) https://doi.org/10.1103/PhysRevB.44.3695
Suppression of the dominant recombination center in n-type GaAs by proximity annealing of wafers
D. Wong, T. E. Schlesinger and A. G. Milnes Journal of Applied Physics 68 (11) 5588 (1990) https://doi.org/10.1063/1.346995
Experimental evidence for a negative-Ucenter in gallium arsenide related to oxygen
H. Ch. Alt Physical Review Letters 65 (27) 3421 (1990) https://doi.org/10.1103/PhysRevLett.65.3421
Modeling the effects of surface states on DLTS spectra of GaAs MESFETs
J.H. Zhao IEEE Transactions on Electron Devices 37 (5) 1235 (1990) https://doi.org/10.1109/16.108184
Characterization of the EL2 center in GaAs by optical admittance spectroscopy
S. Dueñas, E. Castán, A. de Dios, L. Bailón, J. Barbolla and A. Pérez Journal of Applied Physics 67 (10) 6309 (1990) https://doi.org/10.1063/1.345149
The effect of annealing treatments on defect structure and diffusion lengths in bulk n-type GaAs
D. Wong, H. K. Kim, Z. Q. Fang, T. E. Schlesinger and A. G. Milnes Journal of Applied Physics 66 (5) 2002 (1989) https://doi.org/10.1063/1.344338
S.T. Ko, V.K. Lakdawala, K.H. Schoenbach and M.S. Mazzola 861 (1989) https://doi.org/10.1109/PPC.1989.767624
III-V Semiconductor Materials and Devices
D.C. REYNOLDS and D.C. LOOK Materials Processing: Theory and Practices, III-V Semiconductor Materials and Devices 7 429 (1989) https://doi.org/10.1016/B978-0-444-87074-2.50014-4
Electrical and optical characterization of metastable deep-level defects in GaAs
W. R. Buchwald, G. J. Gerardi, E. H. Poindexter, et al. Physical Review B 40 (5) 2940 (1989) https://doi.org/10.1103/PhysRevB.40.2940
Titanium-related deep levels in silicon: A reexamination
D. Mathiot and S. Hocine Journal of Applied Physics 66 (12) 5862 (1989) https://doi.org/10.1063/1.343608
Compensation assessment in ‘‘undoped’’ high-resistivity GaAs
R-S. Tang, L. Sargent and J. S. Blakemore Journal of Applied Physics 66 (1) 256 (1989) https://doi.org/10.1063/1.343866
Temperature Dependence of Photocurrent in Undoped Semi-Insulating Gallium Arsenide
Y. N. Mohapatra and V. Kumar Physica Status Solidi (a) 114 (2) 659 (1989) https://doi.org/10.1002/pssa.2211140229
EL2 distribution in LEC GaAs ingots and wafers
M. Bonnet, N. Visentin and B. Gouteraux Revue de Physique Appliquée 23 (5) 739 (1988) https://doi.org/10.1051/rphysap:01988002305073900
On the atomic configuration of EL2
D. Stievenard and H.J. von Bardeleben Revue de Physique Appliquée 23 (5) 803 (1988) https://doi.org/10.1051/rphysap:01988002305080300
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