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Article cité :
J. Krynicki , J.C. Bourgoin , G. Vassal
Rev. Phys. Appl. (Paris), 14 3 (1979) 481-484
Citations de cet article :
15 articles
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Characterization of irradiation defects using positron annihilation spectroscopy in γ-NiSb and δ-Ni2Si intermetallic phases
A. Jennane, J. Bernardini, P. Moser and G. Moya Journal of Alloys and Compounds 188 94 (1992) https://doi.org/10.1016/0925-8388(92)90650-X
The influence of dose and protecting mask on electrically active defects induced by ion implantation in silicon
B. Remaki, J. J. Marchand and B. Balland Journal of Electronic Materials 18 (1) 85 (1989) https://doi.org/10.1007/BF02655349
Electronic properties of defects created by 1.6 GeV argon ions in silicon
J. Krynicki, M. Toulemonde, J.C. Muller and P. Siffert Materials Science and Engineering: B 2 (1-3) 105 (1989) https://doi.org/10.1016/0921-5107(89)90084-6
Defects in semiconductors after electron irradiation or in high-temperature thermal equilibrium, as studied by positron annihilation
R Wurschum, W Bauer, K Maier, A Seeger and H -E Schaefer Journal of Physics: Condensed Matter 1 (SA) SA33 (1989) https://doi.org/10.1088/0953-8984/1/SA/005
On the Mechanism of Primary Radiation Defect Annihilation in Si
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A molecular cluster study of complex defects in Si: The divacancy and the E center
A. Fazzio, J.R. Leite and M.J. Caldas Physica B+C 116 (1-3) 90 (1983) https://doi.org/10.1016/0378-4363(83)90232-2
The Effect of Dislocations on the Radiation Defect Annealing Processes in Silicon
L. A. Kazakevich and P. F. Lugakov physica status solidi (a) 74 (1) 113 (1982) https://doi.org/10.1002/pssa.2210740113
Nature of the Defect Determining the Fermi Level Stabilization in Irradiated Silicon
P. F. Lugakov, T. A. Lukashevich and V. V. Shusha physica status solidi (a) 74 (2) 445 (1982) https://doi.org/10.1002/pssa.2210740209
Deep centers introduced by argon ion bombardment in n-type silicon
J. Garrido, E. Calleja and J. Piqueras Solid-State Electronics 24 (12) 1121 (1981) https://doi.org/10.1016/0038-1101(81)90180-5
CW Laser Induced Deep Level Defects in Virgin Silicon.
A. Chantre, M. Kechouane and D. Bois MRS Proceedings 4 (1981) https://doi.org/10.1557/PROC-4-325