Plasma anodization of silicon at room temperature
Rev. Phys. Appl. (Paris), 16 8 (1981) 419-424
Article cité par
La fonctionnalité Article cité par… liste les citations d'un article. Ces citations proviennent de la base de données des articles de EDP Sciences, ainsi que des bases de données d'autres éditeurs participant au programme CrossRef Cited-by Linking Program. Vous pouvez définir une alerte courriel pour être prévenu de la parution d'un nouvel article citant " cet article (voir sur la page du résumé de l'article le menu à droite).
Article cité :
Citations de cet article :
Passivation of defect states in Si-based and GaAs structures
E. Pinčík, H. Kobayashi, R. Brunner, et al.Applied Surface Science 254 (24) 8059 (2008)
https://doi.org/10.1016/j.apsusc.2008.03.029
Anomaly in the growth rate of anodic oxide films due to the presence of a (Sm + Sm2O3) overlayer at a GaAs surface
E. Pinčík, J. Kocanda, J. Bartoš, V. Nadaždy and M. JergelThin Solid Films 272 (1) 21 (1996)
https://doi.org/10.1016/0040-6090(95)06871-6
Low temperature plasma anodic oxidation of silicon through thin aluminium overlayers
Jiří Bartoš and Emil PinčíkThin Solid Films 247 (2) 178 (1994)
https://doi.org/10.1016/0040-6090(94)90796-X
Thin film interconnect processes
Farid MalikThin Solid Films 206 (1-2) 70 (1991)
https://doi.org/10.1016/0040-6090(91)90395-E
Investigation of ionic transport mechanisms during plasma anodization of Si and Si through ZrO2
B. Pelloie, J. Perrière, J. Siejka, et al.Journal of Applied Physics 63 (8) 2620 (1988)
https://doi.org/10.1063/1.341000
The effect of discharge conditions on the inductively coupled plasma oxidation of silicon
S. Taylor, G. Kennedy and W. EcclestonVacuum 38 (8-10) 643 (1988)
https://doi.org/10.1016/0042-207X(88)90434-4
Theory for the plasma anodization of silicon under constant voltage and constant current conditions
S. Taylor, W. Eccleston and K. J. BarlowJournal of Applied Physics 64 (11) 6515 (1988)
https://doi.org/10.1063/1.342076
Oxidation through the zirconia substrates of heteroepitaxial silicon films Grown on yttria-stabilized cubic zirconia
I. Golecki, R. L. Maddox, H. L. Glass, et al.Journal of Electronic Materials 14 (5) 531 (1985)
https://doi.org/10.1007/BF02654023
Study of oxygen transport processes during plasma anodization of Si between room temperature and 600 °C
J. Perriere, J. Siejka and R. P. H. ChangJournal of Applied Physics 56 (10) 2716 (1984)
https://doi.org/10.1063/1.333800
Review of oxidation processes in plasmas†
P. Friedel and S. GourrierJournal of Physics and Chemistry of Solids 44 (5) 353 (1983)
https://doi.org/10.1016/0022-3697(83)90063-X
Growth of dielectric films on semiconductors and metals using a multipole plasma
S. Gourrier, P. Friedel, P. Dimitriou and J.B. TheetenThin Solid Films 84 (4) 379 (1981)
https://doi.org/10.1016/0040-6090(81)90173-5