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Cited article:

Limitation fondamentale dans les transistors MOS de puissance ; le compromis entre la résistance à l'état passant RON et la tension de claquage VDBR

P. Rossel, H. Tranduc, M. Gamboa, T. Phan Pham

Rev. Phys. Appl. (Paris), 16 9 (1981) 509-515

DOI: https://doi.org/10.1051/rphysap:01981001609050900

This article has been cited by the following article(s):

Power MOS devices: Structure evolutions and modelling approaches

P. Rossel, H. Tranduc and G. Charitat
Microelectronics Reliability 37 (9) 1375 (1997)
https://doi.org/10.1016/S0026-2714(97)00009-7

J.L. Sanchez, P. Leturcq, P. Austin, R. Berriane, M. Breil, C. Anceau and C. Ayela
201 (1996)
https://doi.org/10.1109/ISPSD.1996.509481

P. Rossel, H. Tranduc and G. Charitat
1 341 (1995)
https://doi.org/10.1109/ICMEL.1995.500891

Discrete and integrated MOS power technologies

Pierre Rossel and Jean Buxo
Physica B+C 129 (1-3) 33 (1985)
https://doi.org/10.1016/0378-4363(85)90553-4

Power M.O.S. devices

P. Rossel
Microelectronics Reliability 24 (2) 339 (1984)
https://doi.org/10.1016/0026-2714(84)90455-4

Protection des transistors MOS en régime de deuxième claquage

H. Tranduc and P. Rossel
Revue de Physique Appliquée 17 (6) 389 (1982)
https://doi.org/10.1051/rphysap:01982001706038900