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Article cité :
J. Oualid , M. Bonfils , J.P. Crest , G. Mathian , H. Amzil , J. Dugas , M. Zehaf , S. Martinuzzi
Rev. Phys. Appl. (Paris), 17 3 (1982) 119-124
Citations de cet article :
19 articles
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Investigation of Impurity Neutralization and Defect Passivation in Polycrystalline Silicon Solar Cells
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Silicon Processing for Photovoltaics II
P. DE PAUW, R. MERTENS and R. VAN OVERSTRAETEN Materials Processing: Theory and Practices, Silicon Processing for Photovoltaics II 6 1 (1987) https://doi.org/10.1016/B978-0-444-87024-7.50008-1
Influence and passivation of extended crystallographic defects in polycrystalline silicon
S. Martinuzzi Revue de Physique Appliquée 22 (7) 637 (1987) https://doi.org/10.1051/rphysap:01987002207063700
Influence of illumination on the grain boundary recombination velocity in silicon
J. Oualid, C. M. Singal, J. Dugas, J. P. Crest and H. Amzil Journal of Applied Physics 55 (4) 1195 (1984) https://doi.org/10.1063/1.333161
Light-beam-induced current characterization of grain boundaries
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Passivation of intragrain defects by copper diffusion in p-type polycrystalline silicon
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Theory of beam induced current characterization of grain boundaries in polycrystalline solar cells
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Dependence of electronic properties of polysilicon grain size and intragrain defects
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Grain boundary barrier height in base and space charge regions
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Relative influence of grain boundaries and intragrain defects on the photocurrents obtained with bridgman polysilicon
H. Amzil, M. Zehaf, J.P. Crest, et al. Solar Cells 8 (3) 269 (1983) https://doi.org/10.1016/0379-6787(83)90066-2
Fourth E.C. Photovoltaic Solar Energy Conference
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