Passivation par l'hydrogène de défauts recombinants dans les photopiles réalisées sur rubans de silicium polycristallin RAD
Rev. Phys. Appl. (Paris), 19 4 (1984) 333-342
Article cité par
La fonctionnalité Article cité par… liste les citations d'un article. Ces citations proviennent de la base de données des articles de EDP Sciences, ainsi que des bases de données d'autres éditeurs participant au programme CrossRef Cited-by Linking Program. Vous pouvez définir une alerte courriel pour être prévenu de la parution d'un nouvel article citant " cet article (voir sur la page du résumé de l'article le menu à droite).
Article cité :
Citations de cet article :
Hydrogen at semiconductor grain boundaries and interfaces
M. AucouturierPhysica B: Condensed Matter 170 (1-4) 469 (1991)
https://doi.org/10.1016/0921-4526(91)90161-7
Hydrogen in Semiconductors
M. AucouturierHydrogen in Semiconductors 469 (1991)
https://doi.org/10.1016/B978-0-444-89138-9.50063-2
Performance analysis of deuterium ion implanted polycrystalline silicon solar cell
A.K. Sharma, R. Gopal, R. Dwivedi and S.K. SrivastavaSolar & Wind Technology 6 (6) 713 (1989)
https://doi.org/10.1016/0741-983X(89)90009-X
A study of the majority carrier mobility in hydrogenated boron-doped silicon
A. Chari and M. AucouturierSolid State Communications 71 (2) 105 (1989)
https://doi.org/10.1016/0038-1098(89)90444-4
Temperature parameter in hydrogen passivation of multicrystalline silicon solar cells
J.C. Muller, Vu Thuong Quat, P. Siffert, et al.Solar Cells 25 (2) 109 (1988)
https://doi.org/10.1016/0379-6787(88)90016-6
Hydrogen ion passivation of multicrystalline silicon solar cells
J.C. Muller, A. Barhdadi, Y. Ababou and P. SiffertRevue de Physique Appliquée 22 (7) 649 (1987)
https://doi.org/10.1051/rphysap:01987002207064900
Gettering effects in RAD polysilicon ribbons: An XPS / AES study
E. Amarray, J.P. Deville and J. QuesadaJournal of Crystal Growth 82 (1-2) 216 (1987)
https://doi.org/10.1016/0022-0248(87)90189-8
Impurity-defect interaction in polycrystalline silicon for photovoltaic applications. The role of hydrogen
A. Chari, P. de Mierry, A. Menikh and M. AucouturierRevue de Physique Appliquée 22 (7) 655 (1987)
https://doi.org/10.1051/rphysap:01987002207065500
Seventh E.C. Photovoltaic Solar Energy Conference
A. Chari, P. de Mierry and M. AucouturierSeventh E.C. Photovoltaic Solar Energy Conference 995 (1987)
https://doi.org/10.1007/978-94-009-3817-5_177
Role of oxygen in surface segregation of metal impurities in silicon poly-and bicrystals
E. Amarray and J.P. DevilleRevue de Physique Appliquée 22 (7) 663 (1987)
https://doi.org/10.1051/rphysap:01987002207066300
Growth of silicon ribbons by the RAD process
C. BelouetJournal of Crystal Growth 82 (1-2) 110 (1987)
https://doi.org/10.1016/0022-0248(87)90173-4
Passivation of polycrystalline silicon solar cells by low-energy hydrogen ion implantation
J.C. Muller, Y. Ababou, A. Barhdadi, et al.Solar Cells 17 (2-3) 201 (1986)
https://doi.org/10.1016/0379-6787(86)90013-X
The use of H2 and NH3 ion implantation in the passivation of defects in silicon ribbon grown by the ribbon-against-drop technique
E. Courcelle, J.C. Muller, P. Siffert and C. BelouetSolar Cells 14 (2) 157 (1985)
https://doi.org/10.1016/0379-6787(85)90038-9
Some problems arising in hydrogen passivation of silicon by ion bombardment techniques
J.C. Muller, Y. Ababou, A. Barhdadi, et al.Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms 7-8 304 (1985)
https://doi.org/10.1016/0168-583X(85)90570-1
Multiple-beam ion implantation setup for large scale treatment of semiconductors
J.C. Muller, E. Courcelle, D. Salles and P. SiffertNuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms 6 (1-2) 394 (1985)
https://doi.org/10.1016/0168-583X(85)90663-9
Silicon Processing for Photovoltaics I
C. BELOUETMaterials Processing: Theory and Practices, Silicon Processing for Photovoltaics I 5 85 (1985)
https://doi.org/10.1016/B978-0-444-86810-7.50009-6