Article cité par

La fonctionnalité Article cité par… liste les citations d'un article. Ces citations proviennent de la base de données des articles de EDP Sciences, ainsi que des bases de données d'autres éditeurs participant au programme CrossRef Cited-by Linking Program. Vous pouvez définir une alerte courriel pour être prévenu de la parution d'un nouvel article citant " cet article (voir sur la page du résumé de l'article le menu à droite).

Article cité :

Characterization and comparison of fluoroelastomer unfilled, filled with carbon nanotube (unmodified, acid or base surface modified) and carbon black using TGA-GCMS

J Heidarian and A Hassan
Journal of Elastomers & Plastics 53 (7) 861 (2021)
https://doi.org/10.1177/0095244321990402

Plasma Parameters and Kinetics of Active Particles in the Mixture CHF3 + O2 + Ar

A. M. Efremov, D. B. Murin and K.-H. Kwon
Russian Microelectronics 49 (4) 233 (2020)
https://doi.org/10.1134/S1063739720030038

Parameters of Plasma and Way of Etching Silicon in a CF4 + CHF3 + O2 Mixture

A. M. Efremov, D. B. Murin and K.-H. Kwon
Russian Microelectronics 48 (6) 364 (2019)
https://doi.org/10.1134/S1063739719060040

Features of the Kinetics of Bulk and Heterogeneous Processes in CHF3 + Ar and C4F8 + Ar Plasma Mixtures

D. B. Murin, A. M. Efremov and K.-H. Kwon
Russian Microelectronics 48 (2) 99 (2019)
https://doi.org/10.1134/S1063739719020070

Etching Mechanisms and Surface Conditions for SiOxNy Thin Films in CF4 + CHF3 + O2 Inductively Coupled Plasma

Junmyung Lee, Jihun Kim, Alexander Efremov, et al.
Plasma Chemistry and Plasma Processing 39 (4) 1127 (2019)
https://doi.org/10.1007/s11090-019-09973-w

Cause analysis of the faults in HARC etching processes by using the PI‐VM model for OLED display manufacturing

Seolhye Park, Yunyoung Kyung, Juyoung Lee, et al.
Plasma Processes and Polymers 16 (9) (2019)
https://doi.org/10.1002/ppap.201900030

Plasma diagnostics for the low-pressure plasma polymerization process: A critical review

Damien Thiry, Stephanos Konstantinidis, Jérôme Cornil and Rony Snyders
Thin Solid Films 606 19 (2016)
https://doi.org/10.1016/j.tsf.2016.02.058

On the Use and Limits of Mass Spectrometry for the Characterization of Fluorocarbon Emission during Plasma Processing

Francesco Fracassi, Riccardo d’Agostino and Francesca Illuzzi
Journal of The Electrochemical Society 149 (5) G318 (2002)
https://doi.org/10.1149/1.1467944

Removal of C/sub 2/F/sub 6/ from a semiconductor process flue gas by a ferroelectric packed-bed barrier discharge reactor with an adsorber

K. Urashima, K.G. Kostov, Jen-Shih Chang, et al.
IEEE Transactions on Industry Applications 37 (5) 1456 (2001)
https://doi.org/10.1109/28.952521

Plasma Deposition of Amorphous Silicon-Based Materials

Guy Turban, Bernard Drévillon, Dimitri S. Mataras and Dimitri E. Rapakoulias
Plasma Deposition of Amorphous Silicon-Based Materials 63 (1995)
https://doi.org/10.1016/B978-012137940-7/50003-6

Investigation of Si and Ge etching mechanisms in radiofrequency CF2-O2plasma based on surface reactivities

A Campo, C Cardinaud and G Turban
Plasma Sources Science and Technology 4 (3) 398 (1995)
https://doi.org/10.1088/0963-0252/4/3/009

In-situ diagnostics for plasma surface processing

G. M. W. Kroesen and F. J. Hoog
Applied Physics A Solids and Surfaces 56 (6) 479 (1993)
https://doi.org/10.1007/BF00331399

Etching processes of tungsten in SF6-O2 radio-frequency plasmas

M. C. Peignon, Ch. Cardinaud and G. Turban
Journal of Applied Physics 70 (6) 3314 (1991)
https://doi.org/10.1063/1.350347

Mass spectrometric detection of S2F and S2F2in SF6-18O2RF discharges

R J M M Snijkers, J F Coulon and G Turban
Journal of Physics D: Applied Physics 24 (7) 1098 (1991)
https://doi.org/10.1088/0022-3727/24/7/011

Application of dynamic in-situ ellipsometry and quadrupole mass spectrometry to plasma-assisted etching: Polymer formation and removal

MC Flowers, R Greef, CMK Starbuck, P Southworth and DJ Thomas
Vacuum 40 (6) 483 (1990)
https://doi.org/10.1016/0042-207X(90)90001-F

Plasma Deposition, Treatment, and Etching of Polymers

Riccardo d'Agostino, Francesco Cramarossa, Francesco Fracassi and Francesca Illuzzi
Plasma Deposition, Treatment, and Etching of Polymers 95 (1990)
https://doi.org/10.1016/B978-0-12-200430-8.50008-7

A mass spectrometric analysis of CF4/O2 plasmas: Effect of oxygen concentration and plasma power

J. C. Martz, D. W. Hess and W. E. Anderson
Plasma Chemistry and Plasma Processing 10 (2) 261 (1990)
https://doi.org/10.1007/BF01447130

Mass spectrometric study of SF6-N2 plasma during etching of silicon and tungsten

Nobuki Mutsukura and Guy Turban
Plasma Chemistry and Plasma Processing 10 (1) 27 (1990)
https://doi.org/10.1007/BF01460446

Kinetics of formation of sulfur dimers in pure SF6 and SF6-O2 discharges

N. Sadeghi, H. Debontride, G. Turban and M. C. Peignon
Plasma Chemistry and Plasma Processing 10 (4) 553 (1990)
https://doi.org/10.1007/BF01447264

Analyse XPS des surfaces de Si et SiO2 exposées aux plasmas de CHF3 et CHF3—C2F6. Polymérisation et gravure

Ch. Cardinaud, A. Rhounna, G. Turban and B. Grolleau
Revue de Physique Appliquée 24 (3) 309 (1989)
https://doi.org/10.1051/rphysap:01989002403030900

Monitoring of radio-frequency glow-discharge plasma

Nobuki Mutsukura, Kenji Kobayashi and Yoshio Machi
Journal of Applied Physics 66 (10) 4688 (1989)
https://doi.org/10.1063/1.343826

Plasma- and gas-surface interactions during the chemical vapor deposition of tungsten from H2/WF6

W. M. Green, D. W. Hess and W. G. Oldham
Journal of Applied Physics 64 (9) 4696 (1988)
https://doi.org/10.1063/1.341254

Plasma etching of refractory metals (W, Mo, Ta) and silicon in SF6 and SF6-O2. An analysis of the reaction products

A. Picard and G. Turban
Plasma Chemistry and Plasma Processing 5 (4) 333 (1985)
https://doi.org/10.1007/BF00566008