Revue de Physique Appliquée

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International Journal of Materials Research 96 (11) 1237 (2022)
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Room temperature deformation of 6H–SiC single crystals investigated by micropillar compression

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Materials Science Forum 963 268 (2019)
https://doi.org/10.4028/www.scientific.net/MSF.963.268

Dynamic strain aging of the materials characterized by the Peierls plasticity mechanism

B. V. Petukhov
Technical Physics 61 (9) 1346 (2016)
https://doi.org/10.1134/S1063784216090188

Handbook of Silicon Based MEMS Materials and Technologies

Maria Ganchenkova and Risto M. Nieminen
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https://doi.org/10.1016/B978-0-12-817786-0.00009-8

Handbook of Silicon Based MEMS Materials and Technologies

Maria Ganchenkova and Risto M. Nieminen
Handbook of Silicon Based MEMS Materials and Technologies 253 (2015)
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Tensile prestrain memory effect on subsequent cyclic behavior of FCC metallic materials presenting different dislocations slip modes

Gaël Marnier, Clément Keller and Lakhdar Taleb
International Journal of Plasticity (2015)
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Modeling grown-in dislocation multiplication on prismatic slip planes for GaN single crystals

B. Gao and K. Kakimoto
Journal of Applied Physics 117 (3) (2015)
https://doi.org/10.1063/1.4905946

Alexander–Haasen Model of Basal Plane Dislocations in Single-Crystal Sapphire

B. Gao, S. Nakano, N. Miyazaki and K. Kakimoto
Crystal Growth & Design 14 (8) 4080 (2014)
https://doi.org/10.1021/cg500705t

Dislocation-density-based modeling of the plastic behavior of 4H–SiC single crystals using the Alexander–Haasen model

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A novel constitutive model for semiconductors: The case of silicon

J. Cochard, I. Yonenaga, M. M'Hamdi and Z.L. Zhang
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Plastic behaviour of 4H–SiC single crystals deformed at temperatures between 800 and 1300 °C

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Dislocation microstructure of 4H–SiC single crystals plastically deformed around the transition temperature

A. Lara, M. Castillo-Rodríguez, A. Muñoz and A. Domínguez-Rodríguez
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Kink-Pair Mechanism in <001> SrTiO3Single Crystal Compression-Deformed at Room Temperature

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Handbook of Silicon Based MEMS Materials and Technologies

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Mercury Cadmium Telluride

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Dislocations in Solids

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E. Le Bourhis and G. Patriarche
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Atomistic level studies on the tensile behavior of GaN nanotubes under uniaxial tension

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The European Physical Journal B 61 (4) 413 (2008)
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One-Dimensional Nanostructures

Zhiguo Wang, Fei Gao, Xiaotao Zu and William J. Weber
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Materials Issues for Generation IV Systems

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NATO Science for Peace and Security Series B: Physics and Biophysics, Materials Issues for Generation IV Systems 327 (2008)
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Orientation and temperature dependence of the tensile behavior of GaN nanowires: an atomistic study

Zhiguo Wang, Xiaotao Zu, Li Yang, Fei Gao and William J. Weber
Journal of Materials Science: Materials in Electronics 19 (8-9) 863 (2008)
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Investigation of the nanomechanical properties in relation to the microstructure of Zn1−xBexTe alloys

S. E. Grillo, H. Glénat, T. Tite, et al.
Applied Physics Letters 93 (8) (2008)
https://doi.org/10.1063/1.2970989

Nanoindentation response of compound semiconductors

E. Le Bourhis and G. Patriarche
physica status solidi c 4 (8) 3002 (2007)
https://doi.org/10.1002/pssc.200675450

TEM-nanoindentation studies of semiconducting structures

E. Le Bourhis and G. Patriarche
Micron 38 (4) 377 (2007)
https://doi.org/10.1016/j.micron.2006.06.007

Deformation Behavior of Intermetallics: Models and Experiments

Bella A. Greenberg, Michail A. Ivanov, Olga V. Antonova, Alexander M. Patselov and Alex V. Plotnikov
Israel Journal of Chemistry 47 (3-4) 415 (2007)
https://doi.org/10.1560/IJC.47.3-4.415

Mechanical properties of undoped GaAs. Part I: Yield stress measurements

Shanling Wang and Pirouz Pirouz
Acta Materialia 55 (16) 5500 (2007)
https://doi.org/10.1016/j.actamat.2007.06.008

Some features of the formation and destruction of dislocation barriers in intermetallic compounds: I. Theory

B. A. Greenberg and M. A. Ivanov
The Physics of Metals and Metallography 102 (1) 61 (2006)
https://doi.org/10.1134/S0031918X06070088

Indentation behaviour of (011) thin films of III–V semiconductors: polarity effect differences between GaAs and InP

Ludovic Largeau, Gilles Patriarche, Eric Le Bourhis and Jean-Pierre Rivière
International Journal of Materials Research 97 (9) 1230 (2006)
https://doi.org/10.3139/146.101362

Atomistic simulation of brittle to ductile transition in GaN nanotubes

Zhiguo Wang, Xiaotao Zu, Fei Gao and William J. Weber
Applied Physics Letters 89 (24) (2006)
https://doi.org/10.1063/1.2405879

Nanoindentation investigation of solid-solution strengthening in III-V semiconductor alloys

Eric Le Bourhis and Gilles Patriarche
Zeitschrift für Metallkunde 96 (11) 1237 (2005)
https://doi.org/10.3139/146.101167

Solid-solution strengthening in ordered InxGa1 − xP alloys

E. Le Bourhis † and G. Patriarche
Philosophical Magazine Letters 84 (6) 373 (2004)
https://doi.org/10.1080/09500830410001716122

Dislocations in Solids

Wei Cai, Vasily V. Bulatov, Jinpeng Chang, Ju Li and Sidney Yip
Dislocations in Solids 12 1 (2004)
https://doi.org/10.1016/S1572-4859(05)80003-8

A theory of the effect of impurities on the yield stress of silicon crystals

B. V. Petukhov
Semiconductors 38 (4) 369 (2004)
https://doi.org/10.1134/1.1734660

TEM study of the indentation behaviour of thin Au film on GaAs

G. Patriarche, E. Le Bourhis, D. Faurie and P.O. Renault
Thin Solid Films 460 (1-2) 150 (2004)
https://doi.org/10.1016/j.tsf.2004.01.051

IUTAM Symposium on Mesoscopic Dynamics of Fracture Process and Materials Strength

Pirouz Pirouz, Shanling Wang, Ming Zhang and Jean-Luc Demenet
Solid Mechanics and its Applications, IUTAM Symposium on Mesoscopic Dynamics of Fracture Process and Materials Strength 115 139 (2004)
https://doi.org/10.1007/978-1-4020-2111-4_14

Deformation of covalent crystals in the vicinity of the yield drop

B. V. Petukhov
Crystallography Reports 48 (6) 966 (2003)
https://doi.org/10.1134/1.1627439

Transition from brittle fracture to ductile behavior in 4H–SiC

Ming Zhang, H. M. Hobgood, J. L. Demenet and P. Pirouz
Journal of Materials Research 18 (5) 1087 (2003)
https://doi.org/10.1557/JMR.2003.0150

Effects of annealing on structure of GaAs(001) nanoindentations

E. Le Bourhis and G. Patriarche
Philosophical Magazine Letters 83 (3) 149 (2003)
https://doi.org/10.1080/0950083021000059350

Plastic deformation of III–V semiconductorsunder concentrated load

E. Le Bourhis and G. Patriarche
Progress in Crystal Growth and Characterization of Materials 47 (1) 1 (2003)
https://doi.org/10.1016/j.pcrysgrow.2004.09.001

Couple stresses in crystalline solids: origins from plastic slip gradients, dislocation core distortions, and three-body interatomic potentials

Krishna Garikipati
Journal of the Mechanics and Physics of Solids 51 (7) 1189 (2003)
https://doi.org/10.1016/S0022-5096(03)00036-X

Temperature dependence of the stacking-fault energy in GaAs

W.-J. Moon, T. Umeda and H. Saka
Philosophical Magazine Letters 83 (4) 233 (2003)
https://doi.org/10.1080/0950083031000072480

Yield and fracture properties of the wide band-gap semiconductor 4H-SiC

P. Pirouz, M. Zhang, J.-L. Demenet and H. M. Hobgood
Journal of Applied Physics 93 (6) 3279 (2003)
https://doi.org/10.1063/1.1555255

Modeling of the non-monotonous viscoplastic behavior of uranium dioxide

F Sauter and S Leclercq
Journal of Nuclear Materials 322 (1) 1 (2003)
https://doi.org/10.1016/S0022-3115(03)00276-9

Indentation-induced deformations of GaAs(011) at a high temperature

L. Largeau, G. Patriarche, E. Le Bourhis, A. Rivière and J. P. Rivière
Philosophical Magazine 83 (14) 1653 (2003)
https://doi.org/10.1080/1478643031000095649

Yield point and dislocation velocity of diamond and zincblende semiconductors in different temperature regimes

Hans Siethoff
Philosophical Magazine A 82 (7) 1299 (2002)
https://doi.org/10.1080/01418610208235673

Strength Enhancement of Compensated Strained InP/AlP Superlattice

E. Le Bourhis and G. Patriarche
physica status solidi (a) 189 (1) 175 (2002)
https://doi.org/10.1002/1521-396X(200201)189:1<175::AID-PSSA175>3.0.CO;2-I

Low-load deformation of InP under contact loading; comparison with GaAs

G. Patriarche and E. Le Bourhis
Philosophical Magazine A 82 (10) 1953 (2002)
https://doi.org/10.1080/01418610208235707

Effect of dynamic aging of dislocations on the deformation behavior of extrinsic semiconductors

B. V. Petukhov
Semiconductors 36 (2) 121 (2002)
https://doi.org/10.1134/1.1453422

Modelling of the plastic behaviour of III–V compound semiconductors during compressive tests

R. Lohonka, G. Vanderschaeve and J. Kratochvı́l
Materials Science and Engineering: A 337 (1-2) 50 (2002)
https://doi.org/10.1016/S0921-5093(02)00038-2

Dislocation Motion in Crystals With a High Peierls Relief: A Unified Model Incorporating the Lattice Friction and Localized Obstacles

G. Dour and Y. Estrin
Journal of Engineering Materials and Technology 124 (1) 7 (2002)
https://doi.org/10.1115/1.1421612

Transition from brittleness to ductility in SiC

P Pirouz, M Zhang, J-L Demenet and H M Hobgood
Journal of Physics: Condensed Matter 14 (48) 12929 (2002)
https://doi.org/10.1088/0953-8984/14/48/335

Twist-bonded compliant substrates for III–V semiconductors heteroepitaxy

G Patriarche and E Le Bourhis
Applied Surface Science 178 (1-4) 134 (2001)
https://doi.org/10.1016/S0169-4332(01)00311-7

On the inelastic behavior of crystalline silicon at elevated temperatures

G. Rengarajan and J.N. Reddy
Journal of the Mechanics and Physics of Solids 49 (8) 1665 (2001)
https://doi.org/10.1016/S0022-5096(01)00015-1

Encyclopedia of Materials: Science and Technology

E.A. Stach and R. Hull
Encyclopedia of Materials: Science and Technology 2301 (2001)
https://doi.org/10.1016/B0-08-043152-6/00408-3

A theory of sharp yield point in low-dislocation crystals

B. V. Petukhov
Technical Physics 46 (11) 1389 (2001)
https://doi.org/10.1134/1.1418501

Modelling of transport phenomena and defects in crystal growth processes

S. Pendurti, H. Zhang and V. Prasad
Sadhana 26 (1-2) 71 (2001)
https://doi.org/10.1007/BF02728480

On transition temperatures in the plasticity and fracture of semiconductors

P. Pirouz, J. L. Demenet and M. H. Hong
Philosophical Magazine A 81 (5) 1207 (2001)
https://doi.org/10.1080/01418610108214437

On a change in deformation mechanism in silicon at very high stress: new evidences

J Rabier and J.L Demenet
Scripta Materialia 45 (11) 1259 (2001)
https://doi.org/10.1016/S1359-6462(01)01159-9

Deformations induced by a Vickers indentor in InP at room temperature

E. Le Bourhis and G. Patriarche
The European Physical Journal Applied Physics 12 (1) 31 (2000)
https://doi.org/10.1051/epjap:2000168

Room-Temperature Plasticity of InAs

E. Le Bourhis and G. Patriarche
physica status solidi (a) 179 (1) 153 (2000)
https://doi.org/10.1002/1521-396X(200005)179:1<153::AID-PSSA153>3.0.CO;2-Z

Plastic behavior of 4H-SiC single crystals deformed at low strain rates

J.-L Demenet, M.H Hong and P Pirouz
Scripta Materialia 43 (9) 865 (2000)
https://doi.org/10.1016/S1359-6462(00)00495-4

The Relationship between Activation Parameters and Dislocation Glide in 4H-SiC Single Crystals

A.V. Samant, M.H. Hong and P. Pirouz
physica status solidi (b) 222 (1) 75 (2000)
https://doi.org/10.1002/1521-3951(200011)222:1<75::AID-PSSB75>3.0.CO;2-0

Interactions of Moving Dislocations in Semiconductors with Point, Line and Planar Defects

R. Hull, E. A. Stach, R. Tromp, F. Ross and M. Reuter
physica status solidi (a) 171 (1) 133 (1999)
https://doi.org/10.1002/(SICI)1521-396X(199901)171:1<133::AID-PSSA133>3.0.CO;2-D

On temperature dependence of deformation mechanism and the brittle–ductile transition in semiconductors

P. Pirouz, A. V. Samant, M. H. Hong, A. Moulin and L. P. Kubin
Journal of Materials Research 14 (7) 2783 (1999)
https://doi.org/10.1557/JMR.1999.0372

Effect of Test Temperature and Strain Rate on the Yield Stress of Monocrystalline 6H-SiC

A. V. Samant, W. L. Zhou and P. Pirouz
physica status solidi (a) 166 (1) 155 (1998)
https://doi.org/10.1002/(SICI)1521-396X(199803)166:1<155::AID-PSSA155>3.0.CO;2-V

Yield point of as-grown and predeformed GaAs:Zn

Hans Georg Brion and Hans Siethoff
Journal of Applied Physics 84 (9) 4885 (1998)
https://doi.org/10.1063/1.368732

Activation parameters for dislocation glide in α-SiC

A.V. Samant and P. Pirouz
International Journal of Refractory Metals and Hard Materials 16 (4-6) 277 (1998)
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Plastic deformation of semiconductors: some recent advances and persistent challenges

Amand George
Materials Science and Engineering: A 233 (1-2) 88 (1997)
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Plastic deformation, extended stacking faults and deformation twinning in single crystalline indium phosphide 2. S doped InP

Mohamed Azzaz, Jean-Pierre Michel and Amand George
Philosophical Magazine A 73 (3) 601 (1996)
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Mechanics of shaped crystal growth from the melt

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Indentation-induced dislocations and microtwins in GaSb and GaAs

X. J. Ning, T. Perezt and P. Pirouz
Philosophical Magazine A 72 (4) 837 (1995)
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Defect Structure in Te‐doped GaAs single Crystals after Plastic Deformation (I). Twins and Stacking Faults

Peter Paufler, Gerald Wagner and Katrin Grosse
Crystal Research and Technology 28 (1) 3 (1993)
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Barriers for the kink motion on dislocations in Si

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The yield point of as-grown and pre-deformed semiconductors

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Incremental creep testing: Application to the plasticity of InP between 0.31 and 0.77 Tm

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Plastic deformation of GaAs single crystals as a function of electronic doping I: Medium temperatures (150–650°C)

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Dislocation mobilities and low-temperature macroscopic plasticity of III-V compound semiconductors

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Article cité par

Article cité :

Dislocations and plasticity in semiconductors. II. The relation between dislocation dynamics and plastic deformation

Citations de cet article :

Unveiling the kinetics of interphase and random quaternary Nb Ti precipitations, and strengthening mechanism of HSLA steel

Atomic structure, stability, and dissociation of dislocations in cadmium telluride

Indentation behaviour of (011) thin films of III–V semiconductors: polarity effect differences between GaAs and InP

Nanoindentation investigation of solid-solution strengthening in III-V semiconductor alloys

Plastic deformation of single crystals of the δ1p and δ1k intermetallic compounds in the Fe–Zn system by micropillar compression

Room temperature deformation of 6H–SiC single crystals investigated by micropillar compression

Strain Rate Effect on the Ductile Brittle Transition in Grinding Hot Pressed SiC Ceramics

Analysis of Basal Plane Dislocation Dynamics in 4H-SiC Crystals during High Temperature Treatment

Dynamic strain aging of the materials characterized by the Peierls plasticity mechanism

Handbook of Silicon Based MEMS Materials and Technologies

Handbook of Silicon Based MEMS Materials and Technologies

Tensile prestrain memory effect on subsequent cyclic behavior of FCC metallic materials presenting different dislocations slip modes

Modeling grown-in dislocation multiplication on prismatic slip planes for GaN single crystals

Alexander–Haasen Model of Basal Plane Dislocations in Single-Crystal Sapphire

Dislocation-density-based modeling of the plastic behavior of 4H–SiC single crystals using the Alexander–Haasen model

A novel constitutive model for semiconductors: The case of silicon

Plastic behaviour of 4H–SiC single crystals deformed at temperatures between 800 and 1300 °C

Dislocation microstructure of 4H–SiC single crystals plastically deformed around the transition temperature

Kink-Pair Mechanism in $\langle 001\rangle$ SrTiO$_{3}$ Single Crystal Compression-Deformed at Room Temperature

Kink-Pair Mechanism in <001> SrTiO3Single Crystal Compression-Deformed at Room Temperature

Handbook of Silicon Based MEMS Materials and Technologies

Growth of linearly ordered arrays of InAs nanocrystals on scratched InP

Mercury Cadmium Telluride

Dislocations in Solids

Structure of annealed nanoindentations in n- and p-doped (001)GaAs

Atomistic level studies on the tensile behavior of GaN nanotubes under uniaxial tension

One-Dimensional Nanostructures

Materials Issues for Generation IV Systems

Orientation and temperature dependence of the tensile behavior of GaN nanowires: an atomistic study

Investigation of the nanomechanical properties in relation to the microstructure of Zn1−xBexTe alloys

Nanoindentation response of compound semiconductors

TEM-nanoindentation studies of semiconducting structures

Deformation Behavior of Intermetallics: Models and Experiments

Mechanical properties of undoped GaAs. Part I: Yield stress measurements

Some features of the formation and destruction of dislocation barriers in intermetallic compounds: I. Theory

Indentation behaviour of (011) thin films of III–V semiconductors: polarity effect differences between GaAs and InP

Atomistic simulation of brittle to ductile transition in GaN nanotubes

Nanoindentation investigation of solid-solution strengthening in III-V semiconductor alloys

Solid-solution strengthening in ordered InxGa1 − xP alloys

Dislocations in Solids

A theory of the effect of impurities on the yield stress of silicon crystals

TEM study of the indentation behaviour of thin Au film on GaAs

IUTAM Symposium on Mesoscopic Dynamics of Fracture Process and Materials Strength

Deformation of covalent crystals in the vicinity of the yield drop

Transition from brittle fracture to ductile behavior in 4H–SiC

Effects of annealing on structure of GaAs(001) nanoindentations

Plastic deformation of III–V semiconductorsunder concentrated load

Couple stresses in crystalline solids: origins from plastic slip gradients, dislocation core distortions, and three-body interatomic potentials

Temperature dependence of the stacking-fault energy in GaAs

Yield and fracture properties of the wide band-gap semiconductor 4H-SiC

Modeling of the non-monotonous viscoplastic behavior of uranium dioxide

Indentation-induced deformations of GaAs(011) at a high temperature

Yield point and dislocation velocity of diamond and zincblende semiconductors in different temperature regimes

Strength Enhancement of Compensated Strained InP/AlP Superlattice

Low-load deformation of InP under contact loading; comparison with GaAs

Effect of dynamic aging of dislocations on the deformation behavior of extrinsic semiconductors

Modelling of the plastic behaviour of III–V compound semiconductors during compressive tests

Dislocation Motion in Crystals With a High Peierls Relief: A Unified Model Incorporating the Lattice Friction and Localized Obstacles

Transition from brittleness to ductility in SiC

Twist-bonded compliant substrates for III–V semiconductors heteroepitaxy

On the inelastic behavior of crystalline silicon at elevated temperatures

Encyclopedia of Materials: Science and Technology

A theory of sharp yield point in low-dislocation crystals

Modelling of transport phenomena and defects in crystal growth processes

On transition temperatures in the plasticity and fracture of semiconductors

On a change in deformation mechanism in silicon at very high stress: new evidences

Deformations induced by a Vickers indentor in InP at room temperature

Room-Temperature Plasticity of InAs

Plastic behavior of 4H-SiC single crystals deformed at low strain rates

The Relationship between Activation Parameters and Dislocation Glide in 4H-SiC Single Crystals

Interactions of Moving Dislocations in Semiconductors with Point, Line and Planar Defects

On temperature dependence of deformation mechanism and the brittle–ductile transition in semiconductors

Effect of Test Temperature and Strain Rate on the Yield Stress of Monocrystalline 6H-SiC

Yield point of as-grown and predeformed GaAs:Zn

Activation parameters for dislocation glide in α-SiC

Plastic deformation of semiconductors: some recent advances and persistent challenges