Article cité par

La fonctionnalité Article cité par… liste les citations d'un article. Ces citations proviennent de la base de données des articles de EDP Sciences, ainsi que des bases de données d'autres éditeurs participant au programme CrossRef Cited-by Linking Program. Vous pouvez définir une alerte courriel pour être prévenu de la parution d'un nouvel article citant " cet article (voir sur la page du résumé de l'article le menu à droite).

Article cité :

Epitaxial growth of GaInAsBi thin films on Si (001) substrate using pulsed laser deposition

Alexander S. Pashchenko, Oleg V. Devitsky, Marina L. Lunina, Eleonora M. Danilina, Olga S. Pashchenko, Boris Ber and Vladimir I. Sakharov
Vacuum 227 113372 (2024)
https://doi.org/10.1016/j.vacuum.2024.113372

Imperfections in natural diamond: the key to understanding diamond genesis and the mantle

Maxwell C. Day, Martha G. Pamato, Davide Novella and Fabrizio Nestola
La Rivista del Nuovo Cimento 46 (7) 381 (2023)
https://doi.org/10.1007/s40766-023-00045-6

Stacking fault formation created by plastic deformation at low temperature and small scales in silicon

L. Pizzagalli, J. Godet, S. Brochard, H. J. Gotsis and T. Albaret
Physical Review Materials 4 (9) (2020)
https://doi.org/10.1103/PhysRevMaterials.4.093603

Atomic structure of dissociated 60° dislocations in GaAs/GaAs0.92Sb0.08/GaAs heterostructures

Abhinandan Gangopadhyay, Aymeric Maros, Nikolai Faleev and David J. Smith
Scripta Materialia 153 77 (2018)
https://doi.org/10.1016/j.scriptamat.2018.04.050

Uniaxial compression of silicon nanoparticles: An atomistic study on the shape and size effects

D. Kilymis, C. Gérard, J. Amodeo, U.V. Waghmare and L. Pizzagalli
Acta Materialia 158 155 (2018)
https://doi.org/10.1016/j.actamat.2018.07.063

Correspondence of the plasticity of rocksalt structure ceramics and tetrahedrally coordinated semiconductors

Hans Siethoff
Journal of Applied Physics 94 (5) 3128 (2003)
https://doi.org/10.1063/1.1601294

Yield point and dislocation velocity of diamond and zincblende semiconductors in different temperature regimes

Hans Siethoff
Philosophical Magazine A 82 (7) 1299 (2002)
https://doi.org/10.1080/01418610208235673

Vacancy Interaction with Dislocations in Silicon: The Shuffle-Glide Competition

João F. Justo, Maurice de Koning, Wei Cai and Vasily V. Bulatov
Physical Review Letters 84 (10) 2172 (2000)
https://doi.org/10.1103/PhysRevLett.84.2172

Ultra-high resolution electron microscopy investigation of growth defects in CVD diamond films: twin interactions and fivefold twin centres

S. Delclos, D. Dorignac, F. Phillipp, F. Silva and A. Gicquel
Diamond and Related Materials 9 (3-6) 346 (2000)
https://doi.org/10.1016/S0925-9635(99)00195-8

On temperature dependence of deformation mechanism and the brittle–ductile transition in semiconductors

P. Pirouz, A. V. Samant, M. H. Hong, A. Moulin and L. P. Kubin
Journal of Materials Research 14 (7) 2783 (1999)
https://doi.org/10.1557/JMR.1999.0372

Dislocation core reconstruction and its effect on dislocation mobility in silicon

João F. Justo, Vasily V. Bulatov and Sidney Yip
Journal of Applied Physics 86 (8) 4249 (1999)
https://doi.org/10.1063/1.371353

UHREM investigation of stacking fault interactions in the CVD diamond structure

S Delclos, D Dorignac, F Phillipp, S Moulin and A.M Bonnot
Diamond and Related Materials 8 (2-5) 682 (1999)
https://doi.org/10.1016/S0925-9635(98)00255-6

Ordering of As impurities in a Si dislocation core

A. Maiti, T. Kaplan, M. Mostoller, M. F. Chisholm, S. J. Pennycook and S. T. Pantelides
Applied Physics Letters 70 (3) 336 (1997)
https://doi.org/10.1063/1.118407

Dislocation Kink Motion - Ab-Initio Calculations and Atomic Resolution Movies

J. C. H. Spence, H. R. Kolar, Y. Huang and H. Alexandera
MRS Proceedings 408 (1995)
https://doi.org/10.1557/PROC-408-261

Peierls-Nabarro model of dislocations in silicon with generalized stacking-fault restoring forces

B. Joós, Q. Ren and M. S. Duesbery
Physical Review B 50 (9) 5890 (1994)
https://doi.org/10.1103/PhysRevB.50.5890

Direct Sub-Lattice Imaging of Interface Dislocation Structures in CdTe/GaAs(001)

A. J. McGibbon, S. J. Pennycook, J. E. Angelo and M. J. Mills
MRS Proceedings 355 (1994)
https://doi.org/10.1557/PROC-355-625

The 30° dislocations in plastically deformed gallium phosphide

Gerald Wagner, Peter Paufler, Peter Pongratz and Peter Skalicky
Philosophical Magazine A 67 (1) 143 (1993)
https://doi.org/10.1080/01418619308207148

Free energies of generalized stacking faults in Si and implications for the brittle-ductile transition

Efthimios Kaxiras and Michael S. Duesbery
Physical Review Letters 70 (24) 3752 (1993)
https://doi.org/10.1103/PhysRevLett.70.3752

On the Formation of Extended Stacking Faults with Extrinsic Character in Deformed Indium Phosphide

M. Azzaz, J. P. Michel, A. Jacques and A. George
Physica Status Solidi (a) 137 (2) 401 (1993)
https://doi.org/10.1002/pssa.2211370212

Vacancies and Their Complexes in the Core of Screw Dislocations: Models which Account for ESR Investigations of Deformed Silicon

C. Kisielowski‐Kemmerich
physica status solidi (b) 161 (1) 11 (1990)
https://doi.org/10.1002/pssb.2221610102

Slip and twinning in high-stress-deformed GaAs and the influence of doping

Y. Androussi, G. Vanderschaeve and A. Lefebvre
Philosophical Magazine A 59 (6) 1189 (1989)
https://doi.org/10.1080/01418618908221170

Dislocation dissociation widths in silicon at low temperature under controlled high-stress orientations

J. L. Demenet, P. Grosbras, H. Garem and J. C. Desoyer
Philosophical Magazine A 59 (3) 501 (1989)
https://doi.org/10.1080/01418618908229781

Interactions of in atoms with partial dislocations cores in GaAs: 0.3% In

N. Burle-Durbec, B. Pichaud and F. Minari
Philosophical Magazine Letters 59 (3) 121 (1989)
https://doi.org/10.1080/09500838908206333