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Article cité :
A. Regreny , P. Auvray , A. Chomette , B. Deveaud , G. Dupas , J.Y. Emery , A. Poudoulec
Rev. Phys. Appl. (Paris), 22 5 (1987) 273-278
Citations de cet article :
9 articles
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Determination of the roughness of heteroboundaries from photocurrent spectra of short-period AlAs/GaAs superlattices
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Surface segregation in III–V alloys
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The use of superlattices as internal standards for composition and thickness measurements in modulation-doped quantum well structures
P. Auvray, M. Baudet, A. Poudoulec, C. Guillemot and A. Regreny Journal of Crystal Growth 102 (4) 939 (1990) https://doi.org/10.1016/0022-0248(90)90864-H
Investigation of (AlGa)As/GaAs quantum wells by optical and phototransport measurements
C. Ghezzi, D. Martin, A. Parisini, J. L. Staehli and L. Tarricone physica status solidi (b) 152 (1) 101 (1989) https://doi.org/10.1002/pssb.2221520111
Characterization of MOCVD Grown (Al, Ga)As/GaAs Single Quantum Well Structures by Rutherford Backscattering and Photoluminescence Spectroscopy
R. Flagmeyer, G. Oelgart, K. Kreher, et al. Physica Status Solidi (a) 111 (2) 541 (1989) https://doi.org/10.1002/pssa.2211110219
Structural features of MBE grown very short period GaAs-AlAs superlattices
B. Guenais, A. Poudoulec, P. Auvray, et al. Journal of Crystal Growth 88 (1) 125 (1988) https://doi.org/10.1016/S0022-0248(98)90014-8
Differential spectroscopy of GaAs-Ga1−xAlxAs quantum wells: An unambiguous identification of light-hole and heavy-hole states
H. Mathieu, P. Lefebvre, J. Allegre, B. Gil and A. Regreny Physical Review B 36 (12) 6581 (1987) https://doi.org/10.1103/PhysRevB.36.6581
Optical determination of the AlxGa1-xAs energy gap variation versus the Al concentration in MBE-grown samples
B Lambert, J Caulet, A Regreny, et al. Semiconductor Science and Technology 2 (8) 491 (1987) https://doi.org/10.1088/0268-1242/2/8/003