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Article cité :

Interfacial Defects Change the Correlation between Photoluminescence, Ideality Factor, and Open‐Circuit Voltage in Perovskite Solar Cells

Sohyeon Kim, Jun Hyeok Jang, Ziang Wu, et al.
Small 17 (33) (2021)
https://doi.org/10.1002/smll.202101839

Coupled time resolved and high frequency modulated photoluminescence probing surface passivation of highly doped n-type InP samples

Wei Zhao, Baptiste Bérenguier, Cendra Rakotoarimanana, et al.
Journal of Applied Physics 129 (21) (2021)
https://doi.org/10.1063/5.0033122

Ratiometric temperature measurement using negative thermal quenching of intrinsic BiFeO3 semiconductor nanoparticles

Željka Antić, K. Prashanthi, Sanja Kuzman, et al.
RSC Advances 10 (29) 16982 (2020)
https://doi.org/10.1039/D0RA01896A

Surface State‐Induced Anomalous Negative Thermal Quenching of Multiferroic BiFeO3 Nanowires

Kovur Prashanthi, Željka Antić, Garima Thakur, Miroslav D. Dramićanin and Thomas Thundat
physica status solidi (RRL) – Rapid Research Letters 12 (1) (2018)
https://doi.org/10.1002/pssr.201700352

Enhancement of radiation tolerance in GaAs/AlGaAs core–shell and InP nanowires

Fajun Li, Xiaolong Xie, Qian Gao, et al.
Nanotechnology 29 (22) 225703 (2018)
https://doi.org/10.1088/1361-6528/aab009

All InGaAs Unipolar Barrier Infrared Detectors

Fatih Uzgur, Utku Karaca, Ekin Kizilkan and Serdar Kocaman
IEEE Transactions on Electron Devices 65 (4) 1397 (2018)
https://doi.org/10.1109/TED.2018.2804483

Removal of Surface States and Recovery of Band-Edge Emission in InAs Nanowires through Surface Passivation

M. H. Sun, H. J. Joyce, Q. Gao, et al.
Nano Letters 12 (7) 3378 (2012)
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Theory of nonequilibrium single-electron dynamics in STM imaging of dangling bonds on a hydrogenated silicon surface

Lucian Livadaru, Jason Pitters, Marco Taucer and Robert A. Wolkow
Physical Review B 84 (20) (2011)
https://doi.org/10.1103/PhysRevB.84.205416

Analysis of interface states of n-InP MIS structures based on bias dependence of capacitance and photoluminescence intensity

A Ahaitouf, A Bath, P Thevenin and E Abarkan
Materials Science and Engineering: B 77 (1) 67 (2000)
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Investigation of photon and photocarrier diffusion in In0.53Ga0.47As layer using microluminescence

A.F.G Monte, J.M.R. Cruz, P.C. Morais and H.M. Cox
Solid State Communications 109 (3) 163 (1998)
https://doi.org/10.1016/S0038-1098(98)00543-2

Attempts to correlate hydrogen plasma-induced and Si3N4/GaAs interface-related surface states: a charge deep-level transient spectroscopy study

I. Thurzo and J. Ivančo
Applied Surface Science 108 (1) 187 (1997)
https://doi.org/10.1016/S0169-4332(96)00591-0

Photoluminescence intensity study of n-InP MIS structures realized with a native oxide insulator film

A. Ahaitouf, A. Bath and B. Lepley
Physica Status Solidi (a) 127 (1) 159 (1991)
https://doi.org/10.1002/pssa.2211270117

Time-resolved study of silicon surface recombination

J. Bokor and N.J. Halas
IEEE Journal of Quantum Electronics 25 (12) 2550 (1989)
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Evidence for photon recycling in InP

S. D. Lester, T. S. Kim and B. G. Streetman
Applied Physics Letters 52 (6) 474 (1988)
https://doi.org/10.1063/1.99448