Influence and passivation of extended crystallographic defects in polycrystalline silicon
Rev. Phys. Appl. (Paris), 22 7 (1987) 637-643
Article cité par
La fonctionnalité Article cité par… liste les citations d'un article. Ces citations proviennent de la base de données des articles de EDP Sciences, ainsi que des bases de données d'autres éditeurs participant au programme CrossRef Cited-by Linking Program. Vous pouvez définir une alerte courriel pour être prévenu de la parution d'un nouvel article citant " cet article (voir sur la page du résumé de l'article le menu à droite).
Article cité :
Citations de cet article :
Accurate analytical model for effective carrier mobility of fully hydrogenated poly-si TFTs under White light illumination
K. Toumi, Y. Bourezig, Y.Z Hamri and O. BelaidiOptik 194 163043 (2019)
https://doi.org/10.1016/j.ijleo.2019.163043
Improvement in the light conversion efficiency of silicon solar cells by pure hydrogen annealing
M.H. Xie, J.Y. Chen and K.W. SunMaterials Science in Semiconductor Processing 39 200 (2015)
https://doi.org/10.1016/j.mssp.2015.05.009
Study of different thermal processes on boron-doped PERL cells
Wenjia Li, Zhenjiao Wang, Peiyu Han, et al.Applied Surface Science 311 344 (2014)
https://doi.org/10.1016/j.apsusc.2014.05.066
Characterization of grain boundaries in multicrystalline silicon with high lateral resolution using conductive atomic force microscopy
Maximilian Rumler, Mathias Rommel, Jürgen Erlekampf, et al.Journal of Applied Physics 112 (3) (2012)
https://doi.org/10.1063/1.4746742
Effective hydrogenation and surface damage induced by MW-ECR plasma of fine-grained polycrystalline silicon
D. Madi, P. Prathap, A. Focsa, A. Slaoui and B. BiroukApplied Physics A 99 (4) 729 (2010)
https://doi.org/10.1007/s00339-010-5623-2
Effect of MW-ECR plasma hydrogenation on polysilicon films based solar cells
D. Madi, A. Focsa, S. Roques, et al.Energy Procedia 2 (1) 151 (2010)
https://doi.org/10.1016/j.egypro.2010.07.021
Effect of pressure on surface passivation of silicon solar cell by forming gas annealing
Suresh Kumar Dhungel, Jinsu Yoo, Kyunghae Kim, et al.Materials Science in Semiconductor Processing 7 (4-6) 427 (2004)
https://doi.org/10.1016/j.mssp.2004.09.101
Characterization of multicrystalline silicon:
E EhretSolar Energy Materials and Solar Cells 53 (3-4) 313 (1998)
https://doi.org/10.1016/S0927-0248(98)00022-1
Correlation between electrical activity and extended defect in EMC multicrystalline materials
E Ehret and O MartyMaterials Science and Engineering: B 56 (1) 24 (1998)
https://doi.org/10.1016/S0921-5107(98)00210-4
25 (1997)
https://doi.org/10.1109/PVSC.1997.653916
EBIC Study of Backside Hydrogenation of Poly-Si Solar Cell Grain Boundaries
Z. Chen, R. J. Matson and L. C. BurtonPhysica Status Solidi (a) 132 (1) 51 (1992)
https://doi.org/10.1002/pssa.2211320106
Hydrogen in Semiconductors
I. Perichaud, H. El Ghitani and S. MartinuzziHydrogen in Semiconductors 553 (1991)
https://doi.org/10.1016/B978-0-444-89138-9.50078-4
Passivation of dislocations in silicon by hydrogenation
I. Perichaud, H.El Ghitani and S. MartinuzziPhysica B: Condensed Matter 170 (1-4) 553 (1991)
https://doi.org/10.1016/0921-4526(91)90176-F
Hydrogen in Semiconductors
M. AucouturierHydrogen in Semiconductors 469 (1991)
https://doi.org/10.1016/B978-0-444-89138-9.50063-2
Hydrogen at semiconductor grain boundaries and interfaces
M. AucouturierPhysica B: Condensed Matter 170 (1-4) 469 (1991)
https://doi.org/10.1016/0921-4526(91)90161-7
Defect Control in Semiconductors
U. Voermanns, C. Kisielowski-Kemmerich and H. AlexanderDefect Control in Semiconductors 1357 (1990)
https://doi.org/10.1016/B978-0-444-88429-9.50064-1
Hydrogen desorption from crystalline silicon and its modification due to the presence of dislocations
C. Kisielowski-Kemmerich and W. BeyerJournal of Applied Physics 66 (2) 552 (1989)
https://doi.org/10.1063/1.343572
Infrared microcharacterization of grain boundaries in polycrystalline silicon
A. Borghesi, M. Geddo, G. Guizzetti, et al.Solid State Communications 69 (5) 457 (1989)
https://doi.org/10.1016/0038-1098(89)90219-6
Polycrystalline Semiconductors
S. Pizzini, F. Borsani, A. Sandrinelli, et al.Springer Proceedings in Physics, Polycrystalline Semiconductors 35 115 (1989)
https://doi.org/10.1007/978-3-642-93413-1_15
Influence of dislocations on electrical properties of large grained polycrystalline silicon cells. I. Model
H. El Ghitani and S. MartinuzziJournal of Applied Physics 66 (4) 1717 (1989)
https://doi.org/10.1063/1.344392
Modelling of recombination activity and passivation by hydrogen of dislocations in silicon wafers
H. El Ghitani and S. MartinuzziMaterials Science and Engineering: B 4 (1-4) 153 (1989)
https://doi.org/10.1016/0921-5107(89)90233-X
Polycrystalline Semiconductors
S. MartinuzziSpringer Proceedings in Physics, Polycrystalline Semiconductors 35 148 (1989)
https://doi.org/10.1007/978-3-642-93413-1_20
Influence of dislocations on electrical properties of large grained polycrystalline silicon cells. II. Experimental results
H. El Ghitani and S. MartinuzziJournal of Applied Physics 66 (4) 1723 (1989)
https://doi.org/10.1063/1.344393
Influence of hydrogen on minority carrier recombination at dislocations and sub-boundaries in GaAs
A. Djemel, J. Castaing and J. ChevallierRevue de Physique Appliquée 23 (7) 1337 (1988)
https://doi.org/10.1051/rphysap:019880023070133700
1575 (1988)
https://doi.org/10.1109/PVSC.1988.105975
1624 (1988)
https://doi.org/10.1109/PVSC.1988.105987
Temperature parameter in hydrogen passivation of multicrystalline silicon solar cells
J.C. Muller, Vu Thuong Quat, P. Siffert, et al.Solar Cells 25 (2) 109 (1988)
https://doi.org/10.1016/0379-6787(88)90016-6
Influence of the Decoration by Dislocations on Grain Boundary Passivation by Hydrogen in Silicon
L. Ammor, G. Mathian and S. MartinuzziMRS Proceedings 106 (1987)
https://doi.org/10.1557/PROC-106-95
Modelling of the Dislocation Influence on Electrical Properties of Polycrystalline Silicon Cells
H. El Ghitani and S. MartinuzziMRS Proceedings 106 (1987)
https://doi.org/10.1557/PROC-106-225
Electrical and Electronic Properties of Grain Boundaries in Silicon
Hans J. Queisser and Jorgen H. WernerMRS Proceedings 106 (1987)
https://doi.org/10.1557/PROC-106-53