Electron states and recombination velocities at semiconductor surfaces and interfaces
Rev. Phys. Appl. (Paris), 22 8 (1987) 789-795
Article cité par
La fonctionnalité Article cité par… liste les citations d'un article. Ces citations proviennent de la base de données des articles de EDP Sciences, ainsi que des bases de données d'autres éditeurs participant au programme CrossRef Cited-by Linking Program. Vous pouvez définir une alerte courriel pour être prévenu de la parution d'un nouvel article citant " cet article (voir sur la page du résumé de l'article le menu à droite).
Article cité :
Citations de cet article :
Theoretical analysis of non-radiative multiphonon recombination activity of intrinsic defects in CdTe
D. N. Krasikov, A. V. Scherbinin, A. A. Knizhnik, et al.Journal of Applied Physics 119 (8) (2016)
https://doi.org/10.1063/1.4942529
1 (2015)
https://doi.org/10.1109/PVSC.2015.7356113
Ultrafast Carrier Dynamics in Individual Silicon Nanowires: Characterization of Diameter-Dependent Carrier Lifetime and Surface Recombination with Pump–Probe Microscopy
Erik M. Grumstrup, Michelle M. Gabriel, Emma M. Cating, et al.The Journal of Physical Chemistry C 118 (16) 8634 (2014)
https://doi.org/10.1021/jp502737e
Nonradiative processes involving rare-earth impurities in nanostructures
Jerzy M Langer and N.S SokolovMaterials Science and Engineering: B 81 (1-3) 46 (2001)
https://doi.org/10.1016/S0921-5107(00)00700-5
Temperature dependence of the Schottky barrier in Al/AlGaAs metal‐semiconductor junctions
P. Revva, J. M. Langer, M. Missous and A. R. PeakerJournal of Applied Physics 74 (1) 416 (1993)
https://doi.org/10.1063/1.354126
Accurate measurements of capture cross sections of semiconductor insulator interface states by a trap-filling experiment: The charge-potential feedback effect
Didier Goguenheim, Dominique Vuillaume, Gilbert Vincent and Noble M. JohnsonJournal of Applied Physics 68 (3) 1104 (1990)
https://doi.org/10.1063/1.346751
Capture cross section of Si-SiO2 interface states generated during electron injection
D. Vuillaume, R. Bouchakour, M. Jourdain and J. C. BourgoinApplied Physics Letters 55 (2) 153 (1989)
https://doi.org/10.1063/1.102397
Transition-metal impurities in semiconductors and heterojunction band lineups
Jerzy M. Langer, C. Delerue, M. Lannoo and Helmut HeinrichPhysical Review B 38 (11) 7723 (1988)
https://doi.org/10.1103/PhysRevB.38.7723