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Article cité :
A. George , J. Rabier
Rev. Phys. Appl. (Paris), 22 9 (1987) 941-966
Citations de cet article :
178 articles | Pages :
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J.-L Demenet, M.H Hong and P Pirouz Scripta Materialia 43 (9) 865 (2000) https://doi.org/10.1016/S1359-6462(00)00495-4
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G Vanderschaeve, C Levade and D Caillard Journal of Physics: Condensed Matter 12 (49) 10093 (2000) https://doi.org/10.1088/0953-8984/12/49/309
Plastic deformation of GaAs at low temperatures
T. Suzki, T. Yasutomi, T. Tokuoka and I. Yonenaga Philosophical Magazine A 79 (11) 2637 (1999) https://doi.org/10.1080/01418619908212015
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J. Schreiber, L. Höring, H. Uniewski, S. Hildebrandt and H. S. Leipner physica status solidi (a) 171 (1) 89 (1999) https://doi.org/10.1002/(SICI)1521-396X(199901)171:1<89::AID-PSSA89>3.0.CO;2-D
Mesoscale modelling of the yield point properties of silicon crystals
A. Moulin, M. Condat and L.P. Kubin Acta Materialia 47 (10) 2879 (1999) https://doi.org/10.1016/S1359-6454(99)00180-9
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R. Hull, E. A. Stach, R. Tromp, F. Ross and M. Reuter physica status solidi (a) 171 (1) 133 (1999) https://doi.org/10.1002/(SICI)1521-396X(199901)171:1<133::AID-PSSA133>3.0.CO;2-D
Elemental Dislocation Mechanisms Involved in the Relaxation of Heteroepitaxial Semiconducting Systems
B. Pichaud, M. Putero and N. Burle physica status solidi (a) 171 (1) 251 (1999) https://doi.org/10.1002/(SICI)1521-396X(199901)171:1<251::AID-PSSA251>3.0.CO;2-9
Perfect and partial Frank-Read sources in silicon: A simulation
A. Moulin, M. Condat and L. P. Kubin Philosophical Magazine A 79 (8) 1995 (1999) https://doi.org/10.1080/01418619908210405
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M. Putero, N. Burle and B. Pichaud Philosophical Magazine A 79 (11) 2711 (1999) https://doi.org/10.1080/01418619908212019
On temperature dependence of deformation mechanism and the brittle–ductile transition in semiconductors
P. Pirouz, A. V. Samant, M. H. Hong, A. Moulin and L. P. Kubin Journal of Materials Research 14 (7) 2783 (1999) https://doi.org/10.1557/JMR.1999.0372
Germanium Silicon: Physics and Materials
R. Hull Semiconductors and Semimetals, Germanium Silicon: Physics and Materials 56 101 (1998) https://doi.org/10.1016/S0080-8784(08)62581-8
Activation parameters for dislocation glide in α-SiC
A.V. Samant and P. Pirouz International Journal of Refractory Metals and Hard Materials 16 (4-6) 277 (1998) https://doi.org/10.1016/S0263-4368(98)00054-7
Dislocations and Plasticity in Silicon Crystals by 3-D Mesoscopic Simulations
L.P. Kubin, A. Moulin and P. Pirouz MRS Proceedings 538 (1998) https://doi.org/10.1557/PROC-538-3
Dissociated screw dislocation which can relieve strain energyin the epitaxial layer of GeSi on Si(001)
Xue-Yuan Wan, Jun-Wu Liang, Ming-Liang Liu and Xiao-Jun Jin Physical Review B 55 (15) 9259 (1997) https://doi.org/10.1103/PhysRevB.55.9259
Plastic deformation of semiconductors: some recent advances and persistent challenges
Amand George Materials Science and Engineering: A 233 (1-2) 88 (1997) https://doi.org/10.1016/S0921-5093(97)00052-X
Simulation of Frank-Read sources in silicon
A. Moulin and M. Condat Materials Science and Engineering: A 234-236 406 (1997) https://doi.org/10.1016/S0921-5093(97)00198-6
Dislocation Cores and Hardness Polarity of 4H‐SiC
Xian‐Jie Ning, Nicolas Huvey and Pirouz Pirouz Journal of the American Ceramic Society 80 (7) 1645 (1997) https://doi.org/10.1111/j.1151-2916.1997.tb03033.x
Highly optimized tight-binding model of silicon
Thomas J. Lenosky, Joel D. Kress, Inhee Kwon, et al. Physical Review B 55 (3) 1528 (1997) https://doi.org/10.1103/PhysRevB.55.1528
Mechanics of shaped crystal growth from the melt
John C. Lambropoulos and Chien-Hsing Wu Journal of Materials Research 11 (9) 2163 (1996) https://doi.org/10.1557/JMR.1996.0276
Dynamics of partial dislocations in silicon
L.B. Hansen, K. Stokbro, B.I. Lundqvist and K.W. Jacobsen Materials Science and Engineering: B 37 (1-3) 185 (1996) https://doi.org/10.1016/0921-5107(95)01483-7
C,H,N and O in Si and Characterization and Simulation of Materials and Processes
L.B. Hansen, K. Stokbro, B.I. Lundqvist and K.W. Jacobsen C,H,N and O in Si and Characterization and Simulation of Materials and Processes 185 (1996) https://doi.org/10.1016/B978-0-444-82413-4.50104-9
L12 Ordered Alloys
K. Maeda and S. Takeuchi Dislocations in Solids, L12 Ordered Alloys 10 443 (1996) https://doi.org/10.1016/S1572-4859(96)80009-X
Plastic deformation, extended stacking faults and deformation twinning in single crystalline indium phosphide 2. S doped InP
Mohamed Azzaz, Jean-Pierre Michel and Amand George Philosophical Magazine A 73 (3) 601 (1996) https://doi.org/10.1080/01418619608242986
Indentation-induced dislocations and microtwins in GaSb and GaAs
X. J. Ning, T. Perezt and P. Pirouz Philosophical Magazine A 72 (4) 837 (1995) https://doi.org/10.1080/01418619508239938
X-ray topographic identification of dislocation nucleation mechanisms in the heteroepitaxial system GaAs/Ge
N. Burle, B. Pichaud, N. Guelton and R. G. Saint-Jacques Physica Status Solidi (a) 149 (1) 123 (1995) https://doi.org/10.1002/pssa.2211490109
Test of the Peierls-Nabarro model for dislocations in silicon
Q. Ren, B. Joós and M. S. Duesbery Physical Review B 52 (18) 13223 (1995) https://doi.org/10.1103/PhysRevB.52.13223
Nature of Dislocations in Silicon
L. B. Hansen, K. Stokbro, B. I. Lundqvist, K. W. Jacobsen and D. M. Deaven Physical Review Letters 75 (24) 4444 (1995) https://doi.org/10.1103/PhysRevLett.75.4444
New mechanism of formation of stacking faults in Gd(001)Si heterostructures
S. Oktyabrsky and J. Narayan Philosophical Magazine A 72 (2) 305 (1995) https://doi.org/10.1080/01418619508239927
Misfit dislocation propagation kinetics in GexSi1−x/Ge(100) heterostructures
R. Hull, J. C. Bean, L. J. Peticolas, et al. Applied Physics Letters 65 (3) 327 (1994) https://doi.org/10.1063/1.113023
In Situ Observations of Misfit Dislocations in Lattice-Mismatched Epitaxial Semiconductor Heterostructures
Robert Hull and John Bean MRS Bulletin 19 (6) 32 (1994) https://doi.org/10.1557/S0883769400036721
Peierls-Nabarro model of dislocations in silicon with generalized stacking-fault restoring forces
B. Joós, Q. Ren and M. S. Duesbery Physical Review B 50 (9) 5890 (1994) https://doi.org/10.1103/PhysRevB.50.5890
Pressure tuning of strain in CdTe/InSb epilayer: A photoluminescence and photomodulated reflectivity study
Mark S. Boley, Robert J. Thomas, Meera Chandrasekhar, H. R. Chandrasekhar, A. K. Ramdas, M. Kobayashi and R. L. Gunshor Journal of Applied Physics 74 (6) 4136 (1993) https://doi.org/10.1063/1.354415
Mobility of Partial Dislocations in ZnS and the Cathodoplastic Effect
A. Faress, S. Farenc, C. Levade and G. Vanderschaeve Physica Status Solidi (a) 137 (2) 435 (1993) https://doi.org/10.1002/pssa.2211370216
Dislocation glide in {110} planes in semiconductors with diamond or zinc-blende structure
M. Albrecht, H. P. Strunk, R. Hull and J. M. Bonar Applied Physics Letters 62 (18) 2206 (1993) https://doi.org/10.1063/1.109443
TEMin situinvestigation of dislocation mobility in II-VI semiconductor compound ZnS cathodoplastic effect and the Peierls mechanism
A. Faress, C. Levade and G. Vanderschaeve Philosophical Magazine A 68 (1) 97 (1993) https://doi.org/10.1080/01418619308219359
Quantitative Microscopy of Thin Films
C. Kisielowski, P. Schwander, Y. Kim, J.-L. Rouvière and A. Ourmazd Physica Status Solidi (a) 137 (2) 557 (1993) https://doi.org/10.1002/pssa.2211370226
Semiconductor Interfaces at the Sub-Nanometer Scale
A. Ourmazd Semiconductor Interfaces at the Sub-Nanometer Scale 139 (1993) https://doi.org/10.1007/978-94-011-2034-0_15
Barriers for the kink motion on dislocations in Si
B. Ya. Farber, Yu. L. Iunin, V. I. Nikitenko, et al. Physica Status Solidi (a) 138 (2) 557 (1993) https://doi.org/10.1002/pssa.2211380224
Defect Structure in Te‐doped GaAs single Crystals after Plastic Deformation (I). Twins and Stacking Faults
Peter Paufler, Gerald Wagner and Katrin Grosse Crystal Research and Technology 28 (1) 3 (1993) https://doi.org/10.1002/crat.2170280102
Strain Relief Mechanisms in The Growth of GexSi1−x/Si(110) Heterostructures
R. Hull, J.C. Bean, B. Weir, et al. MRS Proceedings 263 (1992) https://doi.org/10.1557/PROC-263-403
Misfit dislocations in lattice-mismatched epitaxial films
Robert Hull and John C. Bean Critical Reviews in Solid State and Materials Sciences 17 (6) 507 (1992) https://doi.org/10.1080/10408439208244585
The Mechanical Properties of Semiconductors
Hans Siethojf Semiconductors and Semimetals, The Mechanical Properties of Semiconductors 37 143 (1992) https://doi.org/10.1016/S0080-8784(08)62515-6
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V.L. INDENBOM, B.V. PETUKHOV and J. LOTHE Modern Problems in Condensed Matter Sciences, Elastic Strain Fields and Dislocation Mobility 31 489 (1992) https://doi.org/10.1016/B978-0-444-88773-3.50015-7
The Mechanical Properties of Semiconductors
S. Mahajan Semiconductors and Semimetals, The Mechanical Properties of Semiconductors 37 231 (1992) https://doi.org/10.1016/S0080-8784(08)62517-X
Deformation mechanisms at epitaxial semiconductor interfaces studied by in situ TEM
R. Hull, J.C. Bean and F. Ross Proceedings, annual meeting, Electron Microscopy Society of America 50 (1) 248 (1992) https://doi.org/10.1017/S0424820100121648
Misfit dislocations in strained layer epitaxy: I. Energetics
R Hull and J.C Bean Scripta Metallurgica et Materialia 27 (6) 657 (1992) https://doi.org/10.1016/0956-716X(92)90484-V
Dislocation transformation and the anomalies of deformation characteristics in TiAl—III. Temperature evolution of dislocation structure
B.A. Greenberg, O.V. Antonova, L.E. Karkina, A.B. Notkin and M.V. Ponomarev Acta Metallurgica et Materialia 40 (4) 815 (1992) https://doi.org/10.1016/0956-7151(92)90023-8
Deformation characteristics and real structure around indents on {111}A-surfaces of II?VI solid solutions
A. Fissel and M. Schenk Journal of Materials Science: Materials in Electronics 3 (3) 147 (1992) https://doi.org/10.1007/BF00695511
Microscopic Properties of Thin Films: Learning About Point Defects
A. Ourmazd, M. Scheffler, M. Heinemann and J-L. Rouviere MRS Bulletin 17 (12) 24 (1992) https://doi.org/10.1557/S0883769400046923
Quantitative analysis of strain relaxation in GexSi1−x/Si(110) heterostructures and an accurate determination of stacking fault energy in GexSi1−xalloys
R. Hull, J. C. Bean, L. J. Peticolas, et al. Applied Physics Letters 61 (23) 2802 (1992) https://doi.org/10.1063/1.108068
The dislocation core in crystalline materials
M. S. Duesbery and G. Y. Richardson Critical Reviews in Solid State and Materials Sciences 17 (1) 1 (1991) https://doi.org/10.1080/10408439108244630
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M. S. Duesbery, B. Joos and D. J. Michel Physical Review B 43 (6) 5143 (1991) https://doi.org/10.1103/PhysRevB.43.5143
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P. Pirouz and P.M. Hazzledine Scripta Metallurgica et Materialia 25 (5) 1167 (1991) https://doi.org/10.1016/0956-716X(91)90522-3
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M. Zafrany, J.P. Peyrade, F. Voillot, R. Coquillé and L.P. Kubin Acta Metallurgica et Materialia 39 (10) 2361 (1991) https://doi.org/10.1016/0956-7151(91)90017-U
Interpretation of dislocation propagation velocities in strained GexSi1−x/Si(100) heterostructures by the diffusive kink pair model
R. Hull, J. C. Bean, D. Bahnck, L. J. Peticolas, K. T. Short and F. C. Unterwald Journal of Applied Physics 70 (4) 2052 (1991) https://doi.org/10.1063/1.349440
Growth of GexSi1−X/Si Alloys on Si (100), (110) and (111) Surfaces
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The Roles of Stress, Geometry and Orientation on Misfit Dislocations Kinetics and Energetics in Epitaxial Strained Layers.
R. Hull, J. C. Bean, F. Ross, D. Bahnck and L. J. Pencolas MRS Proceedings 239 (1991) https://doi.org/10.1557/PROC-239-379
Strain Relaxation Mechanisms in Lattice Mismatched Epitaxy
R. Hull, J.C. Bean, J.M. Bonar and L. Peticolas MRS Proceedings 198 (1990) https://doi.org/10.1557/PROC-198-459
Plastic deformation of GaAs single crystals as a function of electronic doping I: Medium temperatures (150–650°C)
P. Borvin, J. Rabier and H. Garem Philosophical Magazine A 61 (4) 619 (1990) https://doi.org/10.1080/01418619008231939
Qualitative and Quantitative Differentiation of Paramagnetic Anion‐Antisite‐Related Spectra in GaAs
A. Goltzené and C. Schwab physica status solidi (b) 160 (2) 649 (1990) https://doi.org/10.1002/pssb.2221600226
Dislocation mobilities and low-temperature macroscopic plasticity of III-V compound semiconductors
J. Rabier and P. Boivirn Philosophical Magazine A 61 (4) 673 (1990) https://doi.org/10.1080/01418619008231941
Strained-Layer Superlattices: Materials Science and Technology
S.T. Picraux, B.L. Doyle and J.Y. Tsao Semiconductors and Semimetals, Strained-Layer Superlattices: Materials Science and Technology 33 139 (1990) https://doi.org/10.1016/S0080-8784(08)62653-8
Plastic deformation of gallium antimonide single crystals: Yield stresses, activation parameters and dislocation structures
M'barek Omri, Jean-Pierre Michel and Amand George Philosophical Magazine A 62 (2) 203 (1990) https://doi.org/10.1080/01418619008243918
The martensitic transformation in silicon—III. comparison with other work
P. Pirouz, U. Dahmen, K.H. Westmacott and R. Chaim Acta Metallurgica et Materialia 38 (2) 329 (1990) https://doi.org/10.1016/0956-7151(90)90063-M
Molecular Dynamics Studies of Defects in Si
M.S. Duesbery, D.J. Michel, Efthimios Kaxiras and B. Joos MRS Proceedings 209 (1990) https://doi.org/10.1557/PROC-209-125
The characterization of misfit dislocations at {100} heterojunctions in III–V compound semiconductors
B.C. De Cooman, C.B. Carter, Chan Kam Toi and J.R. Shealy Acta Metallurgica 37 (10) 2779 (1989) https://doi.org/10.1016/0001-6160(89)90312-X
On twinning and polymorphic transformations in compound semiconductors
P. Pirouz Scripta Metallurgica 23 (3) 401 (1989) https://doi.org/10.1016/0036-9748(89)90390-6
Structural and Electronic Properties of GaAs/InGaAs/GaAs Heterostructures
J. M. Bonar, R. Hull, R. J. Malik, R. W. Ryan and J. F. Walker MRS Proceedings 160 (1989) https://doi.org/10.1557/PROC-160-117
Dislocation multiplication in GaAs : inhibition by doping
A. Djemel, J. Castaing, N. Burle-Durbec and B. Pichaud Revue de Physique Appliquée 24 (8) 779 (1989) https://doi.org/10.1051/rphysap:01989002408077900
Scaling relations for strained-layer relaxation
Brian W. Dodson and Jeffrey Y. Tsao Applied Physics Letters 55 (13) 1345 (1989) https://doi.org/10.1063/1.101594
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