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Article cité :
M. Jimenez-Melendo , A. Djemel , J.P. Rivière , J. Castaing , C. Thomas , M. Duseaux
Rev. Phys. Appl. (Paris), 23 3 (1988) 251-255
Citations de cet article :
12 articles
Crystal Growth Technology
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Defect Structure in Te‐doped GaAs Single Crystals after Plastic Deformation (II). Dislocation Slip and Cell Formation
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Microstructure of high-temperature plastically deformed Zn-doped CdTe; comparison with In-doped GaAs
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Dislocations and precipitates in gallium arsenide
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Microtwinning in GaAlAs and GaInAs due to indentation at room temperature
R. Haswell, U. Bangert and P. Charsley Philosophical Magazine Letters 63 (2) 67 (1991) https://doi.org/10.1080/09500839108201961
High-Temperature Creep of GaAs
R. Behrensmeier, H. G. Brion, P. Haasen and H. Siethoff Physica Status Solidi (a) 124 (2) 447 (1991) https://doi.org/10.1002/pssa.2211240209
HREM of Defects in GaAs/Ga1-xInxAs Strained Layer Superlatuices
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Vertical gradient freeze growth of ternary GaSb-InSb crystals
J.P. Garandet, T. Duffar and J.J. Favier Journal of Crystal Growth 106 (2-3) 426 (1990) https://doi.org/10.1016/0022-0248(90)90089-4
Dislocation multiplication in GaAs : inhibition by doping
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Influence of hydrogen on minority carrier recombination at dislocations and sub-boundaries in GaAs
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