Photo response of the EL2 absorption band and of the As+Ga ESR signal in GaAs
Rev. Phys. Appl. (Paris), 23 5 (1988) 779-791
Article cité par
La fonctionnalité Article cité par… liste les citations d'un article. Ces citations proviennent de la base de données des articles de EDP Sciences, ainsi que des bases de données d'autres éditeurs participant au programme CrossRef Cited-by Linking Program. Vous pouvez définir une alerte courriel pour être prévenu de la parution d'un nouvel article citant " cet article (voir sur la page du résumé de l'article le menu à droite).
Article cité :
Citations de cet article :
Absorption and dispersion in undoped epitaxial GaSb layer
Michał Wasiak, Marcin Motyka, Tristan Smołka, Jacek Ratajczak and Agata JasikMaterials Research Express 5 (2) 025907 (2018)
https://doi.org/10.1088/2053-1591/aaae86
On the problem of the EL2 structure in semi-insulating GaAs: high-frequency ODEPR/ODENDOR measurements in W-band
I. Tkach, K. Krambrock and J.-M. SpaethPhysica B: Condensed Matter 308-310 753 (2001)
https://doi.org/10.1016/S0921-4526(01)00827-4
Temperature dependence of the photoquenching of EL2 in semi-insulating GaAs
A. Alvarez, J. Jiménez, M. A. González and L. F. SanzApplied Physics Letters 70 (23) 3131 (1997)
https://doi.org/10.1063/1.119111
The EL2-like metastable defect and the n- to p-type transition in silicon planar-doped GaAs
M. I. N. da Silva, A. G. de Oliveira, G. M. Ribeiro, R. M. Rubinger, J. A. Corrêa and M. V. Baeta MoreiraJournal of Applied Physics 82 (7) 3346 (1997)
https://doi.org/10.1063/1.365645
Infrared absorption related to the metastable state of arsenic antisite defects in electron-irradiated GaAs
S. Kuisma, K. Saarinen, P. Hautojärvi and C. CorbelPhysical Review B 53 (12) R7588 (1996)
https://doi.org/10.1103/PhysRevB.53.R7588
Observation of the negative and positive persistent photoconductivity phenomena in silicon planar-doped GaAs
M.I.N. da Silva, J.A. Corrêa F., J.C. Bezerra and A.G. de OliveiraSolid State Communications 92 (9) 745 (1994)
https://doi.org/10.1016/0038-1098(94)90765-X
Theoretical investigation of the dynamic process of the illumination of GaAs
Ren Guang-bao, Wang Zhan-guo, Xu Bo and Zhou BingPhysical Review B 50 (8) 5189 (1994)
https://doi.org/10.1103/PhysRevB.50.5189
Defect identification in semiconductors by Brewster angle spectroscopy
H. J. Lewerenz and N. DietzJournal of Applied Physics 73 (10) 4975 (1993)
https://doi.org/10.1063/1.353817
Optical Nonlinearities and Carrier Transport in GaAs: EL2 at High Excitation Levels
K. Jarasiunas, Ph. Delaye and G. Roosenphysica status solidi (b) 175 (2) 445 (1993)
https://doi.org/10.1002/pssb.2221750216
Optically induced recovery by near band gap photons (1.4 eV<hν<1.5 eV) of EL2 level from its metastable state in semi-insulating GaAs
Juan Jiménez, Alejandro Alvárez, Mohammed Chafai, Luis F. Sanz and Jacques BonnaféJournal of Applied Physics 73 (6) 2871 (1993)
https://doi.org/10.1063/1.353015
Brewster angle spectroscopy: A new method for characterization of defect levels in semiconductors
H. J. Lewerenz and N. DietzApplied Physics Letters 59 (12) 1470 (1991)
https://doi.org/10.1063/1.105291
New Features of Dark and Photoconductivity Response of Low Energy Ar+ Ion bombarded GaAs
A. Vaseashta and L. C. BurtonMRS Proceedings 147 (1989)
https://doi.org/10.1557/PROC-147-309
Optical Spectroscopy of Impurity Levels in GaAs
Joachim WagnerPhysica Scripta T29 167 (1989)
https://doi.org/10.1088/0031-8949/1989/T29/031
Spatial distribution of residual shallow acceptors in undoped semi-insulating GaAs
J. Wagner, W. Wettling, J. Windscheif and W. RothemundJournal of Applied Physics 65 (12) 5225 (1989)
https://doi.org/10.1063/1.343161
Electron paramagnetic resonance identification of theSbGaheteroantisite defect in GaAs:Sb
M. Baeumler, J. Schneider, U. Kaufmann, W. C. Mitchel and P. W. YuPhysical Review B 39 (9) 6253 (1989)
https://doi.org/10.1103/PhysRevB.39.6253
Persistent photocurrents in semi-insulating gallium arsenide
U. V. DesnicaRadiation Effects and Defects in Solids 111-112 (1-2) 83 (1989)
https://doi.org/10.1080/10420158908212984
Characterisation of deep electron states in LEC grown GaAs material
T Hashizume and H NagabuchiSemiconductor Science and Technology 4 (6) 427 (1989)
https://doi.org/10.1088/0268-1242/4/6/002
Optically enhanced photoconductivity in semi-insulating gallium arsenide
U. V. Desnica and B. ŠantićApplied Physics Letters 54 (9) 810 (1989)
https://doi.org/10.1063/1.100854