La fonctionnalité Article cité par… liste les citations d'un article. Ces citations proviennent de la base de données des articles de EDP Sciences, ainsi que des bases de données d'autres éditeurs participant au programme CrossRef Cited-by Linking Program . Vous pouvez définir une alerte courriel pour être prévenu de la parution d'un nouvel article citant " cet article (voir sur la page du résumé de l'article le menu à droite).
Article cité :
B.K. Meyer
Rev. Phys. Appl. (Paris), 23 5 (1988) 809-816
Citations de cet article :
11 articles
Handbook of Applied Solid State Spectroscopy
Lowell D. Kispert and Lidia Piekara-Sady Handbook of Applied Solid State Spectroscopy 151 (2006) https://doi.org/10.1007/0-387-37590-2_4
Identification of Defects in Semiconductors
J.-M. Spaeth Semiconductors and Semimetals, Identification of Defects in Semiconductors 51 45 (1998) https://doi.org/10.1016/S0080-8784(08)63054-9
Imperfections in III/V Materials
Udo Scherz and Matthias Scheffler Semiconductors and Semimetals, Imperfections in III/V Materials 38 1 (1993) https://doi.org/10.1016/S0080-8784(08)62797-0
Advances in Solid State Physics 33
J.-M. Spaeth and K. Krambrock Advances in Solid State Physics, Advances in Solid State Physics 33 33 111 (1993) https://doi.org/10.1007/BFb0107885
ODMR of stoichiometry defects in III–V semiconductors
J.-M. Spaeth, M. Fockele and K. Krambrock Materials Science and Engineering: B 13 (4) 261 (1992) https://doi.org/10.1016/0921-5107(92)90126-T
Identification of the isolated arsenic antisite defect in electron-irradiated gallium arsenide and its relation to theEL2 defect
K. Krambrock, J.-M. Spaeth, C. Delerue, G. Allan and M. Lannoo Physical Review B 45 (3) 1481 (1992) https://doi.org/10.1103/PhysRevB.45.1481
Non-Stoichiometry in Semiconductors
J.-M. Spaeth, M. Fockele and K. Krambrock Non-Stoichiometry in Semiconductors 193 (1992) https://doi.org/10.1016/B978-0-444-89355-0.50028-4
Brewster angle spectroscopy: A new method for characterization of defect levels in semiconductors
H. J. Lewerenz and N. Dietz Applied Physics Letters 59 (12) 1470 (1991) https://doi.org/10.1063/1.105291
EPR evidence for As interstitial-related defects in semi-insulating GaAs
E. Christoffel, T. Benchiguer, A. Goltzené, et al. Physical Review B 42 (6) 3461 (1990) https://doi.org/10.1103/PhysRevB.42.3461
Characterisation of deep electron states in LEC grown GaAs material
T Hashizume and H Nagabuchi Semiconductor Science and Technology 4 (6) 427 (1989) https://doi.org/10.1088/0268-1242/4/6/002
Isolated arsenic-antisite defect in GaAs and the properties ofEL2
Jaroslaw Dabrowski and Matthias Scheffler Physical Review B 40 (15) 10391 (1989) https://doi.org/10.1103/PhysRevB.40.10391