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Article cité :
G.A. Baraff , M. Lannoo
Rev. Phys. Appl. (Paris), 23 5 (1988) 817-831
Citations de cet article :
17 articles
C,H,N and O in Si and Characterization and Simulation of Materials and Processes
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An investigation by resistance and photoluminescence measurements of high-energy heavy-ion irradiated GaAs
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Infrared absorption by deep levels in low-temperature electron-irradiated GaAs
A. Pillukat and P. Ehrhart Physical Review B 45 (15) 8815 (1992) https://doi.org/10.1103/PhysRevB.45.8815
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Festkörperprobleme 29
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Quenching and recovery characteristics of theEL2 defect in GaAs under monochromatic-light illumination
M. O. Manasreh and D. W. Fischer Physical Review B 40 (17) 11756 (1989) https://doi.org/10.1103/PhysRevB.40.11756
Characterisation of deep electron states in LEC grown GaAs material
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Infrared absorption properties of theEL2 and the isolatedAsGadefects in neutron-transmutation-doped GaAs: Generation of anEL2-like defect
M. O. Manasreh and D. W. Fischer Physical Review B 39 (5) 3239 (1989) https://doi.org/10.1103/PhysRevB.39.3239
The EL2 Defect in GaAs: Some Recent Developments
M. O. Manasreh, D. W. Fischer and W. C. Mitchel physica status solidi (b) 154 (1) 11 (1989) https://doi.org/10.1002/pssb.2221540102
Native defects in gallium arsenide
J. C. Bourgoin, H. J. von Bardeleben and D. Stiévenard Journal of Applied Physics 64 (9) R65 (1988) https://doi.org/10.1063/1.341206
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