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Radiation Effects in Advanced Semiconductor Materials and Devices
Cor Claeys and Eddy Simoen Springer Series in Materials Science, Radiation Effects in Advanced Semiconductor Materials and Devices 57 245 (2002) https://doi.org/10.1007/978-3-662-04974-7_7
Radiation Effects in Advanced Semiconductor Materials and Devices
Cor Claeys and Eddy Simoen Springer Series in Materials Science, Radiation Effects in Advanced Semiconductor Materials and Devices 57 109 (2002) https://doi.org/10.1007/978-3-662-04974-7_4
Ways of providing radiation resistance of magnetic field semiconductor sensors
Deep-level characterization in semi-insulating GaAs by photo-induced current and Hall effect transient spectroscopy
K YASUTAKE, H KAKIUCHI, A TAKEUCHI, K YOSHII and H KAWABE Journal of Materials Science: Materials in Electronics 8(4) 239 (1997) https://doi.org/10.1023/A:1018566701908
Formation of EL2, AsGa and U band in irradiated GaAs: Effects of annealing
A. Jorio, C. Carlone, M. Parenteau, C. Aktik and N. L. Rowell Journal of Applied Physics 80(3) 1364 (1996) https://doi.org/10.1063/1.363023
Photorefractive measurements on electron-irradiated semi-insulating GaAs
Stoichiometry-dependent native acceptor and donor levels in Ga-rich-n-type gallium arsenide
G. Marrakchi, A. Kalboussi, G. Bremond, G. Guillot, S. Alaya, H. Maaref and R. Fornari Journal of Applied Physics 71(7) 3325 (1992) https://doi.org/10.1063/1.350953
Anomalous optical and electrical recovery processes of the photoquenched EL2 defect produced by oxygen and boron ion implantation in gallium arsenide
J. Samitier, S. Marco, A. Pérez-Rodríguez, J. R. Morante, P. Boher and M. Renaud Journal of Applied Physics 71(1) 252 (1992) https://doi.org/10.1063/1.350751
On the artificial creation of the EL2 center by means of boron implantation in gallium arsenide
J. R. Morante, A. Pérez-Rodríguez, J. Samitier and A. Romano-Rodríguez Journal of Applied Physics 70(8) 4202 (1991) https://doi.org/10.1063/1.349145
Variation of deep electron traps created by γ irradiation of GaAs