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Article cité :
M. Lemiti , S. Audisio , C. Mai , B. Balland
Rev. Phys. Appl. (Paris), 24 2 (1989) 133-141
Citations de cet article :
9 articles
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Modelling of the active defects influence on the electrical characteristics of an SiGe-HBT
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Rapid thermal oxidation of highly in situ phosphorus doped polysilicon thin films
S Kallel, B Semmache, M Lemiti and A Laugier Materials Science in Semiconductor Processing 1 (3-4) 275 (1998) https://doi.org/10.1016/S1369-8001(98)00038-9
Fluctuations and non-continuous network in disordered systems: Low-frequency Raman scattering
E. Duval, T. Achibat, A. Boukenter and A. Mermet Philosophical Magazine B 71 (4) 625 (1995) https://doi.org/10.1080/01418639508238551
SEM overestimation of the mean grain size of chemically etched polycrystalline silicon films
Diego Bisero Materials Letters 18 (4) 215 (1994) https://doi.org/10.1016/0167-577X(94)90234-8
X-ray diffraction study of P-doped polycrystalline Si thin films used in ULSI devices
D. Bisero, M. Dapor and B. Margesin Materials Letters 14 (5-6) 303 (1992) https://doi.org/10.1016/0167-577X(92)90042-I