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About the dislocation screening charge

D. Ferré, A. Diallo, J.L. Farvacque

Rev. Phys. Appl. (Paris), 25 2 (1990) 177-182

DOI: https://doi.org/10.1051/rphysap:01990002502017700

Citations de cet article :

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Scattering rates due to lineal dislocations in heterostructures for the Monte Carlo charge transport simulation

Michel Abou-Khalil, Toshiaki Matsui, Zahia Bougrioua, Roman Maciejko, Ke Wu, K. Wu, R. Maciejko and Z. Bougrioua
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Theoretical aspects of the minority carrier recombination at dislocations in semiconductors

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Materials Science and Engineering: B 42 (1-3) 110 (1996)
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Definition of a collision time tensor for electric transport in the presence of anisotropic scattering mechanisms. Application to the case of dislocation scattering in GaAs

J -L Farvacque
Semiconductor Science and Technology 10 (7) 914 (1995)
https://doi.org/10.1088/0268-1242/10/7/003

Response to the comment on « EBIC contrast theory of dislocations: intrinsic recombination properties »

J.L. Farvacque and B. Sieber
Revue de Physique Appliquée 25 (11) 1109 (1990)
https://doi.org/10.1051/rphysap:0199000250110110900