Hot electrons injection into the oxide of a silicon-on-sapphire igfet at low operating voltage M. Garrigues, Y. Hellouin, T. Pedron et J.J. UrgellRev. Phys. Appl. (Paris), 13 12 (1978) 619-624DOI: https://doi.org/10.1051/rphysap:019780013012061900
