The characterisation of metal-thin insulator-n-p+ silicon switching devices J. Buxo, A.E. Owen, G. Sarrabayrouse et J.P. SebaaRev. Phys. Appl. (Paris), 13 12 (1978) 767-770DOI: https://doi.org/10.1051/rphysap:019780013012076700
