Passivation of intragrain defects by copper diffusion in p-type polycrystalline silicon M. Zehaf, G. Mathian, C.M. Singal et S. MartinuzziRev. Phys. Appl. (Paris), 18 9 (1983) 557-560DOI: https://doi.org/10.1051/rphysap:01983001809055700
