Electrical characterization of as-grown, annealed and indium-doped Hg1-xZnxTe for x near 0.15 S. Rolland, A. Lasbley, A. Seyni, R. Granger et R. TribouletRev. Phys. Appl. (Paris), 24 8 (1989) 795-802DOI: https://doi.org/10.1051/rphysap:01989002408079500
