Issue
Rev. Phys. Appl. (Paris)
Volume 9, Number 2, mars 1974
Page(s) 347 - 353
DOI https://doi.org/10.1051/rphysap:0197400902034700
Rev. Phys. Appl. (Paris) 9, 347-353 (1974)
DOI: 10.1051/rphysap:0197400902034700

General physical studies on semiconductors using a scanning electron microscope

A. Gopinath, De Monts de Savasse et G.A.C. Jones

School of Electronic Engineering Science, University College of North Wales, Dean Street, Bangor, Caerns., North Wales, England


Abstract
The beam-induced conductive-mode and cathodoluminescence mode have been used in the study of GaAs and InP epitaxial layers and Gunn devices. The paper outlines the techniques used.


Résumé
Les modes de conductibilité à faisceau induit et de cathodoluminescence ont été employés à l'étude des couches épitaxiales et des diodes d'effet Gunn. On indique dans cet exposé les techniques utilisées.

PACS
0780 - Electron and ion microscopes and techniques.
2390 - Electron and ion microscopes.
2560 - Semiconductor devices.

Key words
cathodoluminescence -- electron microscope examination of materials -- electron microscopy -- gallium arsenide -- III V semiconductors -- indium compounds -- semiconductors -- physical studies -- semiconductors -- scanning electron microscope -- cathodoluminescence mode -- GaAs -- InP -- epitaxial layers -- Gunn devices -- techniques -- beam induced conductive mode