Issue
Rev. Phys. Appl. (Paris)
Volume 12, Number 2, février 1977
Page(s) 185 - 188
DOI https://doi.org/10.1051/rphysap:01977001202018500
Rev. Phys. Appl. (Paris) 12, 185-188 (1977)
DOI: 10.1051/rphysap:01977001202018500

Characterization of undoped high resistivity CdTe grown by a THM method

R. Stuck, J.C. Muller et P. Siffert

Centre de Recherches Nucléaires, Laboratoire de Physique des Rayonnements et d'Electronique Nucléaire, 67037 Strasbourg France


Abstract
Using time of flight technique, it is shown that the level at E v + 0.15 eV, attributed generally to the association of a dopant impurity and a cadmium vacancy, is present in undoped materials. Several methods (TSC, SIMS, nuclear activation) have been used to investigate the nature of this impurity.


Résumé
Des mesures de temps de vol des porteurs dans des échantillons de tellurure de cadmium purs de haute résistivité ont montré la présence du niveau situé à Ev + 0,15 eV, généralement attribué à l'association impureté donatrice-lacune de cadmium. On a recherché, par différentes méthodes expérimentales, la nature de cette impureté.

PACS
7155F - Impurity and defect levels in tetrahedrally bonded nonmetals.
7220F - Low field transport and mobility: piezoresistance semiconductors/insulators.
7280E - Electrical conductivity of III V and II VI semiconductors.
8110F - Crystal growth from melt.
0510 - Crystal growth.
2520D - II VI and III V semiconductors.

Key words
cadmium compounds -- crystal growth from melt -- II VI semiconductors -- impurity electron states -- mass spectra -- neutron activation analysis -- semiconductor growth -- thermally stimulated currents -- time of flight spectra -- undoped high resistivity CdTe -- time of flight technique -- nuclear activation -- travelling heater method growth -- impurity level -- thermally stimulated current -- secondary ion mass spectrometry -- II VI semiconductor -- carrier mobility