Issue
Rev. Phys. Appl. (Paris)
Volume 22, Number 11, novembre 1987
Page(s) 1381 - 1388
DOI https://doi.org/10.1051/rphysap:0198700220110138100
References of Rev. Phys. Appl. (Paris) 22 1381-1388
  • Colloquium on dopant and carrier concentration in semiconductors layers, IEEE Trans. Electron Devices digest N 55 (1984).
  • Kennedy, D.P., Murley, P.C., Kleinfelder, W., IBM J. Res. Dev. 12 (1968) 399-409.
  • Miller, G.L., IEEE Trans. Electron Devices, ED 19 (1972) 1103-1108. [CrossRef]
  • Lang, D.V., J. Appl. Phys. 45 (1974) 3023. [CrossRef]
  • Sah, C.T., Reddi, V.G.K., IEEE Trans Electron Devices ED 11 (1964) 245-349.
  • Zohta, Y., Solid-State Electron. 16 (1973) 1029-1035. [CrossRef]
  • Goto, G., Yanagosawa, S., Wada, O., Takanashi, H., Appl. Phys. Lett. 23 (1973) 150-151. [CrossRef]
  • Lefevre, H., Schultz, M., Appl. Phys. 53 (1977) 45-53. [CrossRef]
  • Kimmerling, L.C., J. Appl. Phys. 45 (1974) 1839-1845. [CrossRef]
  • Loualiche, S., Nouailhat, A., Guillot, G., Solid State Electron. 25 (1982) 577-582. [CrossRef]
  • Goto, G., Yanagisawa, S., Wada, O., Takanashi, H., Jpn J. Appl. Phys. 13 (1974) 1127-1133. [CrossRef]
  • Johnson, N.M., Bartelink, D.J., Gold, R.B., Gibbons, J.F., J. Appl. Phys. 50 (1979) 4828-4833. [CrossRef]
  • Li, M.F., Sah, C.T., IEEE Trans. Electron Devices ED 29 (1982) 306-315. [CrossRef]
  • Remaki, B., Thèse Doctorat, L.P.M.-INSA de Lyon (1985).
  • Brotherton, S.D., Solid State Electron. 19 (1976) 341-342. [CrossRef]
  • Wiley, J.D., Miller, G.L., IEEE Trans. Electron Devices ED 22 (1975) 265-272. [CrossRef]
  • Lang, D.V., Grimmeiss, H.G., Meijer, E., Ja-Ros, M., Phys. Rev. B 22 (1980) 3917.
  • Troxell, J.R., Solid State Electron. 26 (1983) 539-548. [CrossRef]
  • Balland, B., Remaki, B., Pinard, P., Mercier, A., J. Physique colloq. 44 (1983) C5-319-324.
  • Pons, D., J. Appl. Phys. 55 (1984) 3644-3657. [CrossRef]