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Cited article:
J. Derrien , F. Arnaud D'Avitaya
Rev. Phys. Appl. (Paris), 11 3 (1976) 377-385
This article has been cited by the following article(s):
15 articles
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AES, photoemission and work function study of the deposition of Cs on (100) and (111)B GaAs epitaxial layers
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Physics of Thin Films - Advances in Research and Development
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John S. Escher Semiconductors and Semimetals 15 195 (1981) https://doi.org/10.1016/S0080-8784(08)60286-0
The adsorption and desorption of Cs on GaP and GaSb (001), (110), (111) and (1̄1̄1̄) surfaces, studied by leed, AES and photoemission
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Leed, aes and photoemission measurements of epitaxially grown GaAs(001), (111)A and (1̄1̄1̄)B surfaces and their behaviour upon cs adsorption
A.J Van Bommel, J.E Crombeen and T.G.J Van Oirschot Surface Science 72 (1) 95 (1978) https://doi.org/10.1016/0039-6028(78)90381-3
Étude théorique par la méthode des orbitales moléculaires de l'adsorption du césium sur la face (110) de l'arséniure de gallium
A Julg and A Allouche Surface Science 71 (3) 719 (1978) https://doi.org/10.1016/0039-6028(78)90457-0
Adsorption of cesium on gallium arsenide (110)
Jacques Derrien and François Arnaud D'avitaya Surface Science 65 (2) 668 (1977) https://doi.org/10.1016/0039-6028(77)90473-3
Isobar, low energy electron diffraction and loss spectroscopy measurements of cesium covered (110) gallium arsenide
J. Derrien, F. Arnaud d'Avitaya and M. Bienfait Solid State Communications 20 (6) 557 (1976) https://doi.org/10.1016/0038-1098(76)91059-0