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Cited article:

Ab initiostudies of Cs on GaAs (100) and (110) surfaces

Siddharth Karkare, Laurent Boulet, Arunima Singh, Richard Hennig and Ivan Bazarov
Physical Review B 91 (3) (2015)
https://doi.org/10.1103/PhysRevB.91.035408

Effect of atomic substrate surface mobility on the nucleation and island growth of thin films

Shi Xu and G. Q. Lu
Journal of Materials Science Letters 13 (22) 1629 (1994)
https://doi.org/10.1007/BF00704522

The adsorption and desorption of Cs on GaP and GaSb (001), (110), (111) and (1̄1̄1̄) surfaces, studied by leed, AES and photoemission

A.J. van Bommel and J.E. Crombeen
Surface Science 93 (2-3) 383 (1980)
https://doi.org/10.1016/0039-6028(80)90271-X

Leed, aes and photoemission measurements of epitaxially grown GaAs(001), (111)A and (1̄1̄1̄)B surfaces and their behaviour upon cs adsorption

A.J Van Bommel, J.E Crombeen and T.G.J Van Oirschot
Surface Science 72 (1) 95 (1978)
https://doi.org/10.1016/0039-6028(78)90381-3

Étude théorique par la méthode des orbitales moléculaires de l'adsorption du césium sur la face (110) de l'arséniure de gallium

A Julg and A Allouche
Surface Science 71 (3) 719 (1978)
https://doi.org/10.1016/0039-6028(78)90457-0

Isobar, low energy electron diffraction and loss spectroscopy measurements of cesium covered (110) gallium arsenide

J. Derrien, F. Arnaud d'Avitaya and M. Bienfait
Solid State Communications 20 (6) 557 (1976)
https://doi.org/10.1016/0038-1098(76)91059-0