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Cited article:

Influence de la polarisation du substrat semi-isolant sur les propriétés électriques du transistor à effet de champ à l'arséniure de gallium et caractérisation de l'interface entre la couche active et le substrat semi-isolant

P. Rossel, H. Tranduc, J. Graffeuil, C. Azizi, G. Nuzillat, G. Bert

Rev. Phys. Appl. (Paris), 13 10 (1978) 503-512

DOI: https://doi.org/10.1051/rphysap:019780013010050300

This article has been cited by the following article(s):

Semi-Insulating III–V Materials

M. Bonnet, J. P. Duchemin, A. M. Huber and G. Morillot
Semi-Insulating III–V Materials 68 (1980)
https://doi.org/10.1007/978-1-4684-9193-7_6

Effets liés à la présence de centres profonds dans une structure du type TEC au GaAs avec buffer

P. Dansas
Physica Status Solidi (a) 60 (2) 631 (1980)
https://doi.org/10.1002/pssa.2210600235

Semi-Insulating III–V Materials

R. Zucca, B. M. Welch, P. M. Asbeck, R. C. Eden and S. I. Long
Semi-Insulating III–V Materials 335 (1980)
https://doi.org/10.1007/978-1-4684-9193-7_45