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Cited article:

Influence de la technique de dépôt d'isolant et des modes de décapage du semiconducteur sur les propriétés électriques de structures métal-Al 2O3-InP

B. Sautreuil, B. Bailly, R. Blanchet, M. Garrigues, P. Viktorovitch

Rev. Phys. Appl. (Paris), 18 12 (1983) 769-773

DOI: https://doi.org/10.1051/rphysap:019830018012076900

This article has been cited by the following article(s):

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Comprehensive study of the valence band of standard alkali-metal and indium phosphorus oxide salts through x-ray photoemission spectroscopy and extended Hückel theory tight-binding analysis: A contribution towards the elucidation of local order in oxides on InP surfaces

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Physical Review B 39 (15) 11055 (1989)
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Couches minces d'oxynitrure de phosphore. Application aux structures MIS sur InP

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Revue de Physique Appliquée 24 (5) 545 (1989)
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Thin Films from Free Atoms and Particles

G. Gautherin, D. Bouchier and C. Schwebel
Thin Films from Free Atoms and Particles 203 (1985)
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Evidence for interfacial defects in metal-insulator-InP structures induced by the insulator deposition

B. Sautreuil, P. Viktorovitch and R. Blanchet
Journal of Applied Physics 57 (6) 2322 (1985)
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Photoluminescence and x-ray photoelectron spectroscopy measurements of InP surface treated by acid and base solutions

S. K. Krawczyk and G. Hollinger
Applied Physics Letters 45 (8) 870 (1984)
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