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Cited article:
S. Loualiche , P. Rojo , G. Guillot , A. Nouailhat
Rev. Phys. Appl. (Paris), 19 3 (1984) 241-244
This article has been cited by the following article(s):
6 articles
Observation of Fe-related defects in neutron irradiated semi-insulating InP
B. Marı́, M. A. Hernández-Fenollosa and F. J. Navarro Journal of Applied Physics 89 (12) 7772 (2001) https://doi.org/10.1063/1.1343891
Bonding of Hydrogen Implanted at 80K INTO III-V Semiconductors
H. J. Stein MRS Proceedings 240 (1991) https://doi.org/10.1557/PROC-240-655
Ion implantation for isolation of III-V semiconductors
S.J. Pearton Materials Science Reports 4 (6) 313 (1990) https://doi.org/10.1016/S0920-2307(05)80001-5
Fast neutron-induced defects in undoped and iron-doped indium phosphide
A. Goltzené, B. Meyer and C. Schwab Journal of Applied Physics 62 (11) 4406 (1987) https://doi.org/10.1063/1.339077
A model of deep center formation and reactions in electron irradiated InP
A. Sibille, J. Suski and M. Gilleron Journal of Applied Physics 60 (2) 595 (1986) https://doi.org/10.1063/1.337453
A Comparison of Deep Levels Generated In InP by Proton and
Deuteron Bombardment
A. T. Macrander and B. Schwartz MRS Proceedings 35 (1984) https://doi.org/10.1557/PROC-35-293