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Cited article:

Electronic properties of grain boundaries in semiconductors

J.C. Bourgoin, A. Mauger, M. Lannoo

Rev. Phys. Appl. (Paris), 22 7 (1987) 579-583

DOI: https://doi.org/10.1051/rphysap:01987002207057900

This article has been cited by the following article(s):

Impact of the dangling bond defects and grain boundaries on trapping recombination process in polycrystalline 3C SiC

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Journal of Alloys and Compounds 823 153752 (2020)
https://doi.org/10.1016/j.jallcom.2020.153752

Festkörperprobleme 34

J. H. Werner, R. Bergmann and R. Brendel
Advances in Solid State Physics, Festkörperprobleme 34 34 115 (1994)
https://doi.org/10.1007/BFb0107524

Determination of the electronic structure of grain boundaries by energy-resolved photoconductivity measurements

S. Pizzini, M. Acciarri, S. Binetti and S. Acerboni
Materials Science and Engineering: B 24 (1-3) 159 (1994)
https://doi.org/10.1016/0921-5107(94)90319-0

Local investigation of recombination at grain boundaries in silicon by grain boundary-electron beam induced current

J. Palm
Journal of Applied Physics 74 (2) 1169 (1993)
https://doi.org/10.1063/1.354917