Articles citing this article

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Cited article:

Defect identification in semiconductors by Brewster angle spectroscopy

H. J. Lewerenz and N. Dietz
Journal of Applied Physics 73 (10) 4975 (1993)
https://doi.org/10.1063/1.353817

Characteristics of Deep Electron Levels in Oxygen-Implanted and (Oxygen + Silicon) Co-Implanted n-GaAs

Dang Tran Quan, A. Le Bloa, Z. Guennouni and P. N. Favennec
Physica Status Solidi (a) 132 (1) 145 (1992)
https://doi.org/10.1002/pssa.2211320115

EL2 related deep traps in semi-insulating GaAs

U. V. Desnica, Dunja I. Desnica and B. Šantić
Applied Physics Letters 58 (3) 278 (1991)
https://doi.org/10.1063/1.104660

Electric-Field-Enhanced Emission from a Discrete Energy Level at the GaAs–Oxide Interface

I. Thurzo, V. Nádaždy and E. Pinčík
physica status solidi (a) 122 (1) 275 (1990)
https://doi.org/10.1002/pssa.2211220126

Native defects in gallium arsenide

J. C. Bourgoin, H. J. von Bardeleben and D. Stiévenard
Journal of Applied Physics 64 (9) R65 (1988)
https://doi.org/10.1063/1.341206