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Cited article:
Y. Mochizuki , T. Ikoma
Rev. Phys. Appl. (Paris), 23 5 (1988) 747-763
This article has been cited by the following article(s):
7 articles
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Defect identification in semiconductors by Brewster angle spectroscopy
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Characteristics of Deep Electron Levels in Oxygen-Implanted and (Oxygen + Silicon) Co-Implanted n-GaAs
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Electric-Field-Enhanced Emission from a Discrete Energy Level at the GaAs–Oxide Interface
I. Thurzo, V. Nádaždy and E. Pinčík physica status solidi (a) 122 (1) 275 (1990) https://doi.org/10.1002/pssa.2211220126
Characterisation of deep electron states in LEC grown GaAs material
T Hashizume and H Nagabuchi Semiconductor Science and Technology 4 (6) 427 (1989) https://doi.org/10.1088/0268-1242/4/6/002
Native defects in gallium arsenide
J. C. Bourgoin, H. J. von Bardeleben and D. Stiévenard Journal of Applied Physics 64 (9) R65 (1988) https://doi.org/10.1063/1.341206