Articles citing this article

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Cited article:

Radiation Effects in Advanced Semiconductor Materials and Devices

Cor Claeys and Eddy Simoen
Springer Series in Materials Science, Radiation Effects in Advanced Semiconductor Materials and Devices 57 245 (2002)
https://doi.org/10.1007/978-3-662-04974-7_7

Gallium arsenide for vertex detectors

S. D'Auria, R. Bates, C. Da Vià, et al.
Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment 386 (1) 177 (1997)
https://doi.org/10.1016/S0168-9002(97)87399-8

Computational materials design: A perspective for atomistic approaches

Erich Wimmer
Journal of Computer-Aided Materials Design 1 (3) 215 (1994)
https://doi.org/10.1007/BF00712850

Defect identification in semiconductors by Brewster angle spectroscopy

H. J. Lewerenz and N. Dietz
Journal of Applied Physics 73 (10) 4975 (1993)
https://doi.org/10.1063/1.353817

Dislocation energy bands in GaAs: An optical absorption study

D. Vignaud and J. L. Farvacque
Journal of Applied Physics 67 (1) 281 (1990)
https://doi.org/10.1063/1.345249

Atomic configuration and electronic properties of the metastable state of theEL2 center in GaAs

C. Delerue and M. Lannoo
Physical Review B 38 (6) 3966 (1988)
https://doi.org/10.1103/PhysRevB.38.3966

Native defects in gallium arsenide

J. C. Bourgoin, H. J. von Bardeleben and D. Stiévenard
Journal of Applied Physics 64 (9) R65 (1988)
https://doi.org/10.1063/1.341206