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Cited article:

Direct condensation modelling for a two-particle growth system: application to GaAs grown by hydride vapour phase epitaxy

E Gil-Lafon, J Napierala, A Pimpinelli, et al.
Journal of Crystal Growth 258 (1-2) 14 (2003)
https://doi.org/10.1016/S0022-0248(03)01311-3

Selective growth of GaAs by HVPE: keys for accurate control of the growth morphologies

E Gil-Lafon, J Napierala, D Castelluci, et al.
Journal of Crystal Growth 222 (3) 482 (2001)
https://doi.org/10.1016/S0022-0248(00)00961-1

Kinetic expression and study of the growth rate of mismatched structures grown by hydride vapour phase epitaxy

E. Gil-Lafon, N. Piffault and R. Cadoret
Journal of Crystal Growth 151 (1-2) 80 (1995)
https://doi.org/10.1016/0022-0248(95)00023-2

Epitaxial growth and kinetic study of mismatched (Ga,In) As/InP layers grown by hydride vapour phase epitaxy

N. Piffault, E. Gil, J. Leymaire, et al.
Journal of Crystal Growth 135 (1-2) 11 (1994)
https://doi.org/10.1016/0022-0248(94)90720-X

Optical investigation in ultrathin InAs/InP quantum wells grown by hydride vapor-phase epitaxy

H. Banvillet, E. Gil, R. Cadoret, P. Disseix, K. Ferdjani, A. Vasson, A. M. Vasson, A. Tabata, T. Benyattou and G. Guillot
Journal of Applied Physics 70 (3) 1638 (1991)
https://doi.org/10.1063/1.349529