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Cited article:

Reactive ion beam etching of silicon with a new plasma ion source operated with CF4 : SiO2 over Si selectivity and Si surface modification

C. Lejeune, J.P. Grandchamp, J.P. Gilles, E. Collard, P. Scheiblin

Rev. Phys. Appl. (Paris), 24 3 (1989) 295-308

DOI: https://doi.org/10.1051/rphysap:01989002403029500

This article has been cited by the following article(s):

Unraveling the Mechanism of Maskless Nanopatterning of Black Silicon by CF4/H2 Plasma Reactive-Ion Etching

Francesco Ghezzi, Matteo Pedroni, Janez Kovač, et al.
ACS Omega 7 (29) 25600 (2022)
https://doi.org/10.1021/acsomega.2c02740

Electron-and ion-assisted silicon surface chemistry in a DC-excited CHF3plasma

C Lejeune, Ch Cardinaud, E Collard, J P Grandchamp and G Turban
Journal of Physics D: Applied Physics 24 (6) 887 (1991)
https://doi.org/10.1088/0022-3727/24/6/013

Chemical physics of fluorine plasma-etched silicon surfaces: Study of surface contaminations

P. Brault, P. Ranson, H. Estrade-Szwarckopf and B. Rousseau
Journal of Applied Physics 68 (4) 1702 (1990)
https://doi.org/10.1063/1.346625

Highly selective SiO2/Si reactive ion beam etching withlow energy fluorocarbon ions

E. Collard, C. Lejeune, J.P. Grandchamp, J.P. Gilles and P. Scheiblin
Thin Solid Films 193-194 100 (1990)
https://doi.org/10.1016/S0040-6090(05)80017-3

Characterization and growth mechanisms of boron nitride films synthesized by ion-beam-assisted deposition

O. Burat, D. Bouchier, V. Stambouli and G. Gautherin
Journal of Applied Physics 68 (6) 2780 (1990)
https://doi.org/10.1063/1.347173

Incidence Angle Dependence of the Silicon Near-Surface Contamination Caused by CF4 Reactive Ion Beam Etching

C. Lejeune, J.P. Grandchamp, J.P. Gilles and E. Collard
MRS Proceedings 190 (1990)
https://doi.org/10.1557/PROC-190-317

CF incorporated overlayer growth on silicon exposed to a d.c.-excited CF4 plasma

C Lejeune, E Collard, J.P Grandchamp, P Scheiblin and J.P Gilles
Thin Solid Films 193-194 1008 (1990)
https://doi.org/10.1016/0040-6090(90)90256-D