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Hydrogen neutralization of dopant in p-type Ga0.47In0.53As

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Magnesium doping in InAlAs and InGaAs/Mg films lattice-matched to InP grown by MOVPE

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Chemical beam epitaxy of Ga0.47In0.53As/InP quantum wells and heterostructure devices

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Quasi‐donor‐acceptor pair photoluminescence emission in GaxIn1−xAs/InP

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Epitaxial growth of InP and related alloys

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Alloy broadening in photoluminescence spectra of Ga0.47In0.53As

C. Charreaux, G. Guillot and A. Nouailhat
Journal of Applied Physics 60 (2) 768 (1986)
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Photoluminescence studies of GaxIn1−xAsyP1−y lattice-matched to InP

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Physica B+C 129 (1-3) 413 (1985)
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Effect of oxygen on In0.53Ga0.47As films grown by molecular beam epitaxy

R. A. Stall, R. J. Wunder, V. Swaminathan and H. M. Cox
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Beam Processing Technologies

W.T. Tsang
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Hydrogen in Semiconductors

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Spectroscopic ellipsometry and electrical characterizations of InGaAs:Mg thin films lattice matched to InP

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Chemical beam epitaxial growth of extremely high quality InGaAs on InP

W. T. Tsang, A. H. Dayem, T. H. Chiu, et al.
Applied Physics Letters 49 (3) 170 (1986)
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