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Evidence for interfacial defects in metal‐insulator‐InP structures induced by the insulator deposition

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Comprehensive study of the valence band of standard alkali-metal and indium phosphorus oxide salts through x-ray photoemission spectroscopy and extended Hückel theory tight-binding analysis: A contribution towards the elucidation of local order in oxides on InP surfaces

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Thin Films from Free Atoms and Particles

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Influence of Ru3+ ions at Al2O3/GaAs interface on MIS structures

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Couches minces d'oxynitrure de phosphore. Application aux structures MIS sur InP

Dang Tran Quan, A. Le Bloa, H. Hbib, et al.
Revue de Physique Appliquée 24 (5) 545 (1989)
DOI: 10.1051/rphysap:01989002405054500
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